Luoyang Key Laboratory of Photonic and Electronic Materials

Luoyang, China

Luoyang Key Laboratory of Photonic and Electronic Materials

Luoyang, China
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Wang X.,Henan University of Science and Technology | Wang X.,Luoyang Key Laboratory of Photonic and Electronic Materials | Zang G.,Henan University of Science and Technology | Zang G.,Luoyang Key Laboratory of Photonic and Electronic Materials | And 7 more authors.
Materials Letters | Year: 2016

The structural, leakage current, ferroelectric and magnetic studies of the co-doped SPTFx (x=0.1, 0.2 and 0.3) films have been investigated. X-ray diffraction and atomic force microscopy reveal the microstructure of the samples. It is found that the dc leakage currents of the films are enhanced gradually with increasing Fe ions due to the variable valence of Fe ions and the increase of oxygen vacancies (OVs). More importantly, both the room-temperature ferroelectric and ferromagnetic properties are successfully realized in STO films, whose possible causes are discussed. This work provides an effective method for the induction of the multiferroic properties in paraelectric materials. © 2016 Elsevier B.V.


Wang X.-F.,Henan University of Science and Technology | Wang X.-F.,Luoyang Key Laboratory of Photonic and Electronic Materials | Hu Q.-B.,Luoyang Institute of Science and Technology | Li L.-B.,Henan University of Science and Technology | And 5 more authors.
Chinese Physics Letters | Year: 2012

Strontium titanate films with high a-axis-orientation [a (100) = 94.1%] were deposited on (111) Pt/Ti/SiO 2/Si substrates by the metal organic deposition process. X-ray diffraction shows that the degree of a-axis orientation increases with increasing annealing temperature. It is found that the dielectric properties are improved by a higher annealing temperature, while the leakage currents are also enhanced, and the possible causes of temperature dependence are discussed. © 2012 Chinese Physical Society and IOP Publishing Ltd.


Wang X.,Henan University of Science and Technology | Wang X.,Luoyang Key Laboratory of Photonic and Electronic Materials | Hu Q.,Luoyang Institute of Science and Technology | Li L.,Henan University of Science and Technology | And 2 more authors.
Journal of Applied Physics | Year: 2012

Pr-doped SrTiO 3 ceramics were fabricated by the conventional solid-state reaction method. Pr-doping greatly decreased the lattice parameters and the average grain size of SrTiO 3 ceramics sample. Two thermally activated dielectric relaxations were found for the low- and high-temperature relaxations, respectively. By means of a detailed analysis, the low-temperature relaxation was ascribed to the electric hopping between Pr 3+ and Pr 4+ induced by the Pr-doping, and the origin of the high-temperature relaxation was changed from oxygen vacancies to the polar nanoregions with the increase of Pr content. © 2012 American Institute of Physics.


Wang X.,Henan University of Science and Technology | Wang X.,Luoyang Key Laboratory of Photonic and Electronic Materials | Sun M.,Luoyang Institute of Science and Technology | Zhang C.,Henan University of Science and Technology | And 5 more authors.
Solid State Communications | Year: 2013

Both multilayered and homogeneous BST films with the same ratio of Ba to Sr are prepared by metal-organic deposition on (111) Pt/Ti/SiO2/Si substrates. X-ray diffraction reveals the microstructure of the samples. Compared with the homogeneous BST film, the multilayered BST film shows improved electrical properties with smaller leakage current, larger dielectric constant, higher tunability and better ferroelectrity. These results are associated with the multilayered structure and strain-related interactions between layers, and the possible causes of which are discussed. © 2013 Elsevier Ltd.


Wang X.,Henan University of Science and Technology | Wang X.,Luoyang Key Laboratory of Photonic and Electronic Materials | Lv S.,Henan University of Science and Technology | Lv S.,Luoyang Key Laboratory of Photonic and Electronic Materials | And 5 more authors.
Journal of Alloys and Compounds | Year: 2013

Both undoped and Mn-doped BST films are fabricated on (111) Pt/Ti/SiO 2/Si by metal organic deposition. X-ray diffraction and atomic force microscopy reveal the microstructure of the samples. The effect of Mn dopant on structural and electrical properties is studied. It is found that the dc leakage behavior and dielectric loss of the BST films are greatly improved due to the change of the valence state of Mn ions. Meanwhile, the tunability of Mn-doped BST films is suppressed, and the possible causes of tunability dependence are discussed. © 2013 Elsevier B.V. All rights reserved.

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