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Ralchenko V.,Harbin Institute of Technology | Ralchenko V.,National Research Nuclear University MEPhI | Sedov V.,National Research Nuclear University MEPhI | Saraykin V.,Lukin Scientific Research Institute of Physical Problems | And 4 more authors.
Applied Physics A: Materials Science and Processing | Year: 2016

Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4–H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10−3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond. © Springer-Verlag Berlin Heidelberg 2016.

Bespalov V.A.,National Research University of Electronic Technology | Il'ichev E.A.,Moscow Institute of Electronic Technology | Kirilenko E.P.,Lukin Scientific Research Institute of Physical Problems | Kozlitin A.I.,Lukin Scientific Research Institute of Physical Problems | And 7 more authors.
Russian Microelectronics | Year: 2015

The results of investigating nanostructured mediums are presented; the mediums are formed in carbon-based and semiconductor materials by the methods enabling integration into microelectronic technologies. The investigations are carried out with a wide variety of instruments and diagnostic techniques. The investigation’s results are shown to be useful in optimizing parameters of technological processes for the formation of nanostructured mediums. © 2015, Pleiades Publishing, Ltd.

Bakurskiy S.V.,Moscow State University | Gudkov A.L.,Lukin Scientific Research Institute of Physical Problems | Klenov N.V.,Moscow State University | Kuznetsov A.V.,Moscow State University | And 2 more authors.
Moscow University Physics Bulletin | Year: 2014

This review is devoted to a discussion of the prospects for solving the problem of a low degree of integration of the traditional elements for promising (due to the high performance and extremely low energy dissipation) superconducting digital electronics. We define three main directions on the path to compact multi-element Josephson electronic systems: (1) reduction of the Josephson junction to submicron size, (2) decrease of the area of standard logic cells, and (3) fabrication of a compact and rapid Josephson memory. We present the physical foundations of Josephson elements in order to show the fundamental constraints on establishing standard submicron tunnel contacts and compact logic cells/memory elements. This survey clearly demonstrates the essence of breakthrough technological solutions to create ultrasmall heterostructures with desired settings, reduce and optimize logic cells, and create memory unit cells based on Josephson junctions with magnetic layers. © 2014, Allerton Press, Inc.

Gudkov A.L.,Lukin Scientific Research Institute of Physical Problems | Kupriyanov M.Y.,Moscow State University | Samus A.N.,Lukin Scientific Research Institute of Physical Problems
Journal of Experimental and Theoretical Physics | Year: 2012

The properties of Nb/α-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change substantially when the degree of doping of the α-Si layer changes: a current transport mechanism and the shape of the current-voltage characteristic of the junctions change. Josephson junctions with SNS-type conduction are formed in the case of a fully degenerate α-Si layer. The properties of such junctions are described by a classical resistive model. Josephson junctions with a resonance mechanism of current transport through impurity centers are formed at a lower degree of doping of the α-Si layer. The high-frequency properties of such junctions are shown to change. The experimental results demonstrate that these junctions are close to SINIS-type Josephson junctions. © Pleiades Publishing, Inc., 2012.

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