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Gromov D.G.,National Research University of Electronic Technology | Savitskiy A.I.,National Research University of Electronic Technology | Pavlova L.M.,National Research University of Electronic Technology | Borgardt N.I.,National Research University of Electronic Technology | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

In the present work we investigated silver and gold cluster array formation on non-heated thin film substrate of amorphous carbon by means vacuum-thermal evaporation of small quantity of material. In basic experiments two series of samples with a different thickness (1-20 nm) were prepared from weight portion 0.6-11 mg, the distance between evaporator and deposition surface was 20 cm. The investigation of the samples of both series by TEM showed the significant dependence of the particle size and the density of their location on the surface on the quantity of condensing Ag and Au or on the virtual film thickness. The interesting results obtained in the work formed the basis of the model which expands understanding condensation processes, nucleation and growth of the crystalline phase from the gas phase. © 2014 SPIE.


Semenov A.M.,RAS Budker Institute of Nuclear Physics | Anashin V.V.,RAS Budker Institute of Nuclear Physics | Goncharova N.F.,RAS Budker Institute of Nuclear Physics | Ushakov V.A.,Lukin Research Institute of Physical Problems | And 2 more authors.
Journal of Surface Investigation | Year: 2011

The status and description of the vacuum system of the Technological Storage Ring Complex of synchrotron radiation source in Zelenograd (Moscow, Russia) are presented. © 2011 Pleiades Publishing, Ltd.


Privezentsev V.V.,Russian Academy of Sciences | Kulikauskas V.S.,Moscow State University | Zatekin V.V.,Moscow State University | Petrov D.V.,Moscow State University | And 2 more authors.
Journal of Surface Investigation | Year: 2015

The cross section of a Si surface layer implanted with 64Zn+ and 16O+ ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted into this layer, which are measured by means of secondary-ion mass spectrometry, as well as their changes arising from heat treatment, are analyzed. The surface morphology is examined with the help of atomic-force microscopy. © 2015, Pleiades Publishing, Ltd.


Gergel V.A.,RAS Institute of Radio Engineering and Electronics | Altukhov I.V.,Russian Academy of Sciences | Verkhovtseva A.V.,RAS Institute of Radio Engineering and Electronics | Galiev G.G.,Russian Academy of Sciences | And 7 more authors.
Semiconductors | Year: 2014

Through mathematical modeling of the conductivity of multibarrier heterostructures, the steady-state current-voltage characteristics, the S-shaped behavior of which is indicative of electrical instability, are obtained. To study its dynamic parameters, an analytical model of instability is developed using known approximations of the physics of semiconductor devices. In the steady-state case, the model yields an S-shaped current-voltage characteristic close to numerical simulation results. This fact is considered as confirmation of the adequacy of the developed analytical model. In the small-signal case, the latter is generalized to the situation with harmonic electrical perturbation. The resulting formula for the frequency dependence of the small-signal impedance indicates the possibility of dynamic-resistance negativity up to terahertz frequencies. A clear physical interpretation of the instability in terms of positive feedback in the unit cell of the multibarrier heterostructures under study is proposed. The results of measurements of the quasi-stead-state current-voltage characteristics of fabricated test multibarrier GaAs/AlGaAs structures with a pronounced portion of negative differential resistance are also presented. © 2014 Pleiades Publishing, Ltd.


Egorkin V.I.,National Research University of Electronic Technology | Il'ichev E.A.,Lukin Research Institute of Physical Problems | Zhuravlev M.N.,National Research University of Electronic Technology | Burzin S.B.,National Research University of Electronic Technology | Shmelev S.S.,National Research University of Electronic Technology
Semiconductors | Year: 2014

The results of the fabrication and study of a double-barrier resonant tunneling structure grown on the basis of GaN and AlN wide-gap materials on a (0001)-oriented sapphire substrate are given. It is shown that, at voltages of ∼3 V, the current-voltage characteristics of resonant tunneling diode samples exhibit a region of negative differential conductivity that disappears upon multiple cyclic measurements. It is also shown that the reversal of sign of the applied voltage restores the initial shape of the current-voltage characteristics and an increase in the temperature of the structure from room temperature to 200°C yields irreversible degradation of the device and a shift of the region of negative differential conductivity to lower voltages. © 2014, Pleiades Publishing, Ltd.

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