Low Power Electronics Association and Projects LEAP

Ibaraki, Japan

Low Power Electronics Association and Projects LEAP

Ibaraki, Japan
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Ohyanagi T.,Low Power Electronics Association and Projects LEAP | Takaura N.,Low Power Electronics Association and Projects LEAP | Kitamura M.,Low Power Electronics Association and Projects LEAP | Tai M.,Low Power Electronics Association and Projects LEAP | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2013

The superlattice film with the periodical thin film layers of Sb 2Te3/GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 °C. Moreover, the pillar structure with the size of 70nm was dry-etched using a HBr/Ar gas mixture. © 2013 The Japan Society of Applied Physics.


Ohyanagi T.,Low Power Electronics Association and Projects LEAP | Kitamura M.,Low Power Electronics Association and Projects LEAP | Araidai M.,Nagoya University | Kato S.,Ibaraki University | And 3 more authors.
Applied Physics Letters | Year: 2014

We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb2Te3.O stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 2

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