Lotus Applied Technology LLC

Beaverton, OR, United States

Lotus Applied Technology LLC

Beaverton, OR, United States

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Patent
Lotus Applied Technology LLC and Toppan Printing Co. | Date: 2017-01-11

A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.


Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.


Patent
Lotus Applied Technology Llc | Date: 2015-10-16

The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m^(2)day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.


A method of forming a thin barrier layer film of a mixed metal oxide, such as a mixture of aluminum, titanium, and oxygen (AlTiO), comprises sequential exposure of a substrate having a surface temperature less than 100 C. to a halide precursor, an oxygen plasma, and a metalorganic precursor. Barrier films formed by the method exhibit improved water vapor transmission rate (WVTR) over single metal oxide films and nanolaminates of two metal oxides having a similar overall thickness.


Systems and methods for depositing a thin film on a flexible substrate involve guiding the flexible substrate along a spiral transport path back and forth between spaced-apart first and second precursor zones so that the substrate transits through the first and second precursor zones multiple times and each time through an intermediate isolation zone without mechanically contacting an outer surface of the substrate with a substrate transport mechanism, thereby inhibiting mechanical damage to the thin film deposited on the outer surface, which may improve barrier layer performance of the thin film.


Patent
Lotus Applied Technology LLC | Date: 2010-12-28

A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO_(2)) or nitrous oxide (N_(2)O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O_(2)).


Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.


Patent
Lotus Applied Technology LLC | Date: 2012-03-09

Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides, such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways of an isolation zone into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.


Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.

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