Tan T.,Liaoning University |
Tan T.,Liaoning Key Laboratory of Photoelectronic Devices and Detection Technology |
Yu H.,Liaoning University |
Yu H.,Liaoning Key Laboratory of Photoelectronic Devices and Detection Technology |
And 6 more authors.
Guangxue Xuebao/Acta Optica Sinica | Year: 2010
1064 nm, 532 nm frequency-doubled antireflection coating with out buffer layer or with different buffer layers were fabricated by using electron beam evaporation technique on LBO. The optical property, adhesion and laser-induced damage threshold (LIDT) were investigated by Lambda900 spectrometer, MTS nano Indenter and Q-switched pulsed laser, respectively. The results showed that the reflectance of all samples was below 0.1% and 0.2% at wavelength of 1064 nm and 532 nm, respectively. Comparing with the sample without buffer layer, the critical adhesion of the sample with buffer layer of Al2O3 was increased by 43% and that of the coating with buffer layer of SiO2 was improved significantly. LIDT of the coatings were improved by using buffer layer of SiO2 and that of the coating with buffer layer of Al2O3 was decreased.