Lextar Electronics Corporation

Hsinchu, Taiwan

Lextar Electronics Corporation

Hsinchu, Taiwan

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Patent
Lextar Electronics Corporation | Date: 2017-04-26

A compound semiconductor film structure includes a substrate, a first compound semiconductor epitaxial layer and a second compound semiconductor epitaxial layer. The substrate has a top surface. The first compound semiconductor epitaxial layer is formed on the top surface and has an epitaxial interface and at least one recess, wherein the epitaxial interface is disposed on one side of the first compound semiconductor epitaxial layer opposite to the side of the first compound semiconductor epitaxial layer facing the top surface, and the at least one recess is formed in the first compound semiconductor epitaxial layer. The second compound semiconductor epitaxial layer formed on the epitaxial interface. The top surface and the bottom of recess are separated by a distance substantially ranging between 0.8m and 1.3m.


Patent
Lextar Electronics Corporation | Date: 2016-09-12

A compound semiconductor film structure includes a substrate, a first compound semiconductor epitaxial layer and a second compound semiconductor epitaxial layer. The substrate has a top surface. The first compound semiconductor epitaxial layer is formed on the top surface and has an epitaxial interface and at least one recess, wherein the epitaxial interface is disposed on one side of the first compound semiconductor epitaxial layer opposite to the side of the first compound semiconductor epitaxial layer facing the top surface, and the at least one recess is formed in the first compound semiconductor epitaxial layer. The second compound semiconductor epitaxial layer formed on the epitaxial interface. The top surface and the bottom of recess are separated by a distance substantially ranging between 0.8 m and 1.3 m.


The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K_(2)MnF_(6 )or KMnO_(4 )in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K_(2)[SiF_(6)]:Mn^(4+). The fluoride phosphor has a particle size in a range of about 1 m to about 10 m. The present invention further provides a light-emitting apparatus and backlight module employing the same.


Patent
Lextar Electronics Corporation | Date: 2016-11-09

The present invention relates to an ultraviolet light-emitting diode (LED), which includes a gradual superlattice layer. The gradual superlattice layer comprises a first superlattice layer and a second superlattice layer. The first superlattice layer includes a multi-layer structure having repetitive stacks of a unit formed by a first layer and a second layer. The second superlattice layer includes a multi-layer structure having repetitive stacks of a unit formed by a third layer and a fourth layer. The concentrations of aluminum in the first, second, third, and fourth layers decrease sequentially. By disposing the gradual superlattice layer, the quality of the epitaxial structure may be improved apparently.


An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.


Patent
Lextar Electronics Corporation | Date: 2016-11-06

A light emitting diode (LED) package includes a light element, a light transferring layer disposed on the light element, a packaging layer enclosing the light transferring layer, a white wall surrounding the packaging layer and a diffusion film disposed on the packaging layer. The light transferring layer has a light outlet face, a light inlet face opposite to the light outlet face and a peripheral side. The light inlet face faces the light element. The white wall surrounds the peripheral side that is enclosed by the packaging layer.


Patent
Lextar Electronics Corporation | Date: 2017-02-16

A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.


An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.


Patent
Lextar Electronics Corporation | Date: 2017-07-19

An end cap structure (101) of a lamp tube includes a housing, an electrical connecting port (120) disposed on the housing for receiving an external power source, a first switch unit (130) movably disposed on the housing, a second switch unit (140) movably disposed on the housing and a conductive elastic piece (150) separated from the electrical connecting port and synchronously moving with the second switch unit. When the lamp tube is disposed on a lamp base, the first switch unit is subjected to an external force so as to move from an original position to a limiting position. When the first switch unit is located at the limiting position, the conductive elastic piece electrically connects to the electrical connecting port by a movement of the second switch unit relative to the housing, and the second switch unit is stopped by the first switch unit.


Patent
Lextar Electronics Corporation | Date: 2017-07-19

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(Cl_(a)Br_(1-a-b)I_(b))_(3), wherein 0a1, 0b1.

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