Lextar Electronics Corporation

Hsinchu, Taiwan

Lextar Electronics Corporation

Hsinchu, Taiwan
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Patent
Lextar Electronics Corporation | Date: 2016-11-09

The present invention relates to an ultraviolet light-emitting diode (LED), which includes a gradual superlattice layer. The gradual superlattice layer comprises a first superlattice layer and a second superlattice layer. The first superlattice layer includes a multi-layer structure having repetitive stacks of a unit formed by a first layer and a second layer. The second superlattice layer includes a multi-layer structure having repetitive stacks of a unit formed by a third layer and a fourth layer. The concentrations of aluminum in the first, second, third, and fourth layers decrease sequentially. By disposing the gradual superlattice layer, the quality of the epitaxial structure may be improved apparently.


The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K_(2)MnF_(6 )or KMnO_(4 )in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K_(2)[SiF_(6)]:Mn^(4+). The fluoride phosphor has a particle size in a range of about 1 m to about 10 m. The present invention further provides a light-emitting apparatus and backlight module employing the same.


An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.


Patent
Lextar Electronics Corporation | Date: 2017-03-15

A lamp tube (100) and an end cap structure (101) thereof are provided. The end cap structure (101) includes a first cover (110), a rotatable body (120), at least one electrode pin (130) and a circuit board (150). The rotatable body (120) is disposed on the first cover (110). The at least one electrode pin (130) is disposed on the first cover (110) for receiving an external power (200). The circuit board (150) is disposed within the first cover (110). The circuit board (150) has at least one contact point (151). The at least one contact point (151) and the at least one electrode pin (130) are electrically connected or insulated via the rotation of the rotatable body (120).


Patent
Lextar Electronics Corporation | Date: 2017-03-22

An LED chip package includes a substrate having a metal terminal (gold finger structure). A LED chip set is composed of a plurality of LED chips formed in one piece, and has a plurality of light-emitting areas which are separated from each other. The LED chip set is disposed on the substrate and electrically connected to the metal terminal.


Patent
Lextar Electronics Corporation | Date: 2017-01-11

A light-guiding pillar used in a vehicle lamp includes a major structure and a light-guiding structure. The major structure has a light incident surface, a light outgoing surface, an upper surface, and a bottom surface. The upper surface and the bottom surface are disposed between the light incident surface and the light outgoing surface, in which the upper surface and the bottom surface are opposite to each other. The major structure is configured to guide a portion of a light beam entering the major structure through the light incident surface to the light outgoing surface. The light-guiding structure is disposed on the upper surface and configured to guide another portion of the light beam entering the major structure through the light incident surface from the upper surface to the bottom surface with passing through the bottom surface.


Patent
Lextar Electronics Corporation | Date: 2017-02-15

A semiconductor light emitting structure (100A;100B;100C;100D) includes a first type semiconductor layer (104), an active layer (105), a second type semiconductor layer (106), an electrode, a transparent conductive layer (107), a Bragg reflective layer (108) and a metal layer (109). The second type semiconductor layer (106), the active layer (105) and the first type semiconductor layer (104) are stacked sequentially to form an epitaxial layer (103). The electrode is formed on the first type semiconductor layer (104). The transparent conductive layer (107) is formed on the second type semiconductor layer (106). The Bragg reflective layer (108) is formed on the transparent conductive layer (107). The Bragg reflective layer (108) and electrode are disposed on opposite sides of the epitaxial layer (103). The metal layer (109) is formed on the Bragg reflective layer (108). The Bragg reflective layer (108) has a concave portion into which the metal layer (109) is put. The metal layer (109) has a current conducting portion embedded into the concave portion and electrically connected to the transparent conductive layer (107).


Patent
Lextar Electronics Corporation | Date: 2017-04-05

A connecting rod is provided. The connecting rod includes an elongate body and an electric connecting element. The elongate body has a first end portion, a second end portion, a hiding surface and at least one supporting surface. The hiding surface and the at least one supporting surface surround an extending axis of the elongate body and are disposed between the first end portion and the second end portion. An area of the hiding surface is smaller than or equal to an area of any of the at least one supporting surface. The electric connecting element is disposed at the hiding surface and extends from the first end portion to the second end portion.


An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.


Patent
Lextar Electronics Corporation | Date: 2017-04-26

A compound semiconductor film structure includes a substrate, a first compound semiconductor epitaxial layer and a second compound semiconductor epitaxial layer. The substrate has a top surface. The first compound semiconductor epitaxial layer is formed on the top surface and has an epitaxial interface and at least one recess, wherein the epitaxial interface is disposed on one side of the first compound semiconductor epitaxial layer opposite to the side of the first compound semiconductor epitaxial layer facing the top surface, and the at least one recess is formed in the first compound semiconductor epitaxial layer. The second compound semiconductor epitaxial layer formed on the epitaxial interface. The top surface and the bottom of recess are separated by a distance substantially ranging between 0.8m and 1.3m.

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