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Kyuregyan A.S.,Lenin All Russia Electrical Engineering Institute | Gorbatyuk A.V.,RAS Ioffe Physical - Technical Institute | Ivanov B.V.,Ulyanov Lenin Saint Petersburg Electrotechnical University Leti
Semiconductors | Year: 2016

The possibility of optimizing high-voltage hybrid SIT–MOP transistors (HSMTs) by means of a local reduction in lifetime near the anode emitter and/ or by decreasing its injection efficiency by three different methods is studied using two-dimensional numerical simulation. It is shown that all four optimization methods are equivalent from the physical point of view and make it possible to decrease the turn-off energy loss Eoff by 30–40%, as in insulated gate bipolar transistors (IGBTs). However, all other conditions being equal, the energy Eoff in the HSMT appeared 15–35% lower than in equivalent trench IGBTs. © 2016, Pleiades Publishing, Ltd.


Kyuregyan A.S.,Lenin All Russia Electrical Engineering Institute
Semiconductors | Year: 2015

A simple analytical theory of the picosecond switching of high-voltage overloaded p+–i–n+ photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs. © 2015, Pleiades Publishing, Ltd.


Kyuregyan A.S.,Lenin All Russia Electrical Engineering Institute
Semiconductors | Year: 2014

An analytical theory of the picosecond switching of high-voltage reverse biased p+-n-n+ structures to the conductive state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the theory and simulation results allowed us to obtain a simple relation between the parameters of structure, light pulse, external circuit and main characteristics of the process, i.e., the activeload current pulse amplitude and switching process duration. © 2014, Pleiades Publishing, Ltd.


Londer Y.I.,Lenin All Russia Electrical Engineering Institute | Ul'yanov K.N.,Lenin All Russia Electrical Engineering Institute
High Temperature | Year: 2014

The anode region of the vacuum-arc discharge in an external magnetic field is studied with allowance for the dependence of the negative anode drop on the ratio of the directed velocity of electrons v0 to their thermal velocity vT. The Poisson equation is solved in a space charge layer near the anode at various values of the electric field E(0), ion velocity vi(0), and parameter v0/vT at the layer-plasma boundary. It is shown that there exists a minimum velocity vi* (0)of ions incoming to the anode layer at which the electric field vanishes at a single point inside the layer. The velocity vi* (0) determines the boundary of the existence of the stationary anode layer and depends on the ratio v0/vT. As v0/vT → 0, the value vi* (0) asymptotically tends to the ionsound speed, which agrees with the well-known Bohm criterion. The velocity vi* (0)increases with an increase in v0/vT. For vt (0) < vi*(0), there are no stationary solutions in the anode layer. The domain of existence of stationary solutions in the anode layer is determined for different values of the parameters E(0) and v0/vT. © 2014, Pleiades Publishing, Ltd.


Londer Ya.I.,Lenin All Russia Electrical Engineering Institute | Ul'Yanov K.N.,Lenin All Russia Electrical Engineering Institute
High Temperature | Year: 2013

A kinetic model of the anode region with a negative anode potential drop is proposed, which explicitly takes into account the ratio of the directed velocity of electrons in plasma v 0 to their thermal speed v T as a parameter of the electron velocity distribution function. A transcendent equation is derived for determination of the negative anode drop as a function of the ratio v 0/v T . It is shown that, unlike the known Langmuir formula, the anode drop remains negative for any value of v 0/v T . In the case of small values (v 0/v T ≈ 1), the derived expression asymptotically reduces to the Langmuir formula. It is shown that the dependence of electron concentration on the potential differs from the Boltzmann law. The anode regions of the short high-current vacuum-arc discharge and the classical low-pressure discharge are considered as examples. For the vacuum-arc discharge, the current density distribution and the anode drop distribution over the anode surface under strong current contraction are calculated. For the low-pressure discharge, potential drops are calculated across the region of the inhomogeneous near-anode plasma and the space charge layer. © 2013 Pleiades Publishing, Ltd.

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