Time filter

Source Type

Leibniz Institute of Innovations for High Performance Microelectronics | Date: 2010-01-12

A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (

Agency: Cordis | Branch: H2020 | Program: RIA | Phase: COMPET-06-2014 | Award Amount: 1.04M | Year: 2015

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects dont affect the switching mechanism. Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topics for space applications. Actually both volatile and nonvolatile memories, excluding few exceptions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad tolerant and not Rad Hard and failure during mission is avoided using Error Correcting Code techniques including redundancy at the board level. The basic goal of the project is to give a methodology for the development of a new rad-hard nonvolatile RRAM memory with high-performance features like good retention, re-programmability and cycling, and realize a prototype (1Mbit RRAM memory) in order to validate the approach.

Leibniz Institute of Innovations for High Performance Microelectronics | Date: 2014-12-01

A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, the portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein the base connection region, aside from a seeding layer adjacent the substrate or a metallization layer adjacent a base contact, consists of a semiconductor material which differs in its chemical composition from the semiconductor material of the collector, the base and the emitter and in which the majority charge carriers of the first conductivity type have greater mobility compared thereto.

Leibniz Institute of Innovations for High Performance Microelectronics | Date: 2013-02-11

A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Agency: Cordis | Branch: H2020 | Program: RIA | Phase: PHC-26-2014 | Award Amount: 4.58M | Year: 2015

myAirCoach aims to develop a holistic mHealth personalised asthma monitoring system empowering patients to manage their own health by providing user friendly tools to increase the awareness of their clinical state and effectiveness of medical treatment. This will be achieved through a multi-disciplinary approach aiming at the development of an ergonomic, compact and efficient sensor-based inhaler that will be in continuous communication with a mobile device. This sensing infrastructure will have the capability of automated monitoring of several clinical, behavioural and environmental factors in realistic conditions. A pipeline of advanced analysis, processing and computational modelling techniques, dealing with raw measurements, extracted features, indicators, and personal profile data representation will ensure clinical state awareness and a timely optimal treatment. Besides, a personal mHealth guidance system will empower patients to customize their treatment towards personalised preset goals and guidelines, either automatically or driven by healthcare professional in a telemedicine manner. In this context, myAirCoach will give to clinicians early indications of increasing symptoms or exacerbations, while making an important contribution in successfully self-management of asthma. The myAirCoach framework will be quantified and evaluated in two test campaigns with carefully designed cohorts of patients in three testing sites. Besides the obvious necessity of the test campaigns to ground the myAirCoach patient models and framework with data, the objective formal validation of the results is expected to lead to increased confidence in the myAirCoach approach and in ICT decision support and self-management systems in general. The impact of such a holistic and innovative approach is huge and the foundations laid here are expected to result in a widespread adoption of sensor-based self-management systems not only in asthma, but also in other respiratory diseases.

Discover hidden collaborations