Kaletta U.C.,Leibniz Institute for Innovative Microelectronics |
Wipf C.,Leibniz Institute for Innovative Microelectronics |
Fraschke M.,Leibniz Institute for Innovative Microelectronics |
Wolansky D.,Leibniz Institute for Innovative Microelectronics |
And 4 more authors.
IEEE Transactions on Electron Devices | Year: 2015
A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to -12.8 dB. The device exhibits high crosstalk suppression of -50 dB on a standard Si-substrate (10 Ωcm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with c-axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement. © 1963-2012 IEEE.
Sun K.,University of California at Los Angeles |
Zhang W.,University of California at Los Angeles |
Li B.,University of California at Los Angeles |
Li B.,Intel Corporation |
And 8 more authors.
IEEE Transactions on Nanotechnology | Year: 2012
Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to further sharpen the field emission tips. © 2012 IEEE.