LayTec GmbH

Berlin, Germany

LayTec GmbH

Berlin, Germany
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Patent
LayTec GmbH | Date: 2010-08-18

A pyrometer that is adapted for detecting radiation in the range of 250 to 450 nm is disclosed. The pyrometer can be used for determining the temperature of a matter thermally emitting only ultraviolet-radiation. In particular, the pyrometer can include: a detector having an active area adapted for measuring thermal radiation, a longpass filter having a cut-off wavelength in the range of 400 to 450 nm, means adapted for alternately activating and deactivating the longpass filter, means adapted for measuring a first thermal radiation signal when the longpass filter is deactivated and adapted for measuring a second thermal radiation signal when the longpass filter is activated, and means adapted for determining a temperature corresponding to the measured thermal radiation from a difference of the first radiation signal and the second radiation signal.


An apparatus for measuring a curvature of a surface (1), comprising means for irradiating a first light beam (S1), a second light beam (S2) and a third light beam (S3) onto a surface (1) of a sample (12), a detector (5) comprising at least one detector plane and being adapted to detect a first position of the reflected first light beam (S1), a second position of the reflected second light beam (S2) and a third position of the reflected third light beam (S3) in the at least one detector plane, means for determining a first distance between the first position of the first light beam (S1) and the third position of the third light beam (S3) and a second distance between the second position of the second light beam (S2) and the third position of the third light beam (S3), and means for determining a mean curvature of the surface from the first distance and the second distance. The first light beam (S1), the second light beam (S2) and the third light beam (S3) are parallel to each other and the first light beam (S1) is spaced apart from a plane defined be the second light beam (S2) and the third light beam (S3).


The present invention relates to a method and an apparatus for determining the layer thickness and the refractive index of a sample. It is an object of the present invention to provide a method for determining the layer thickness of a sample (layer) having high light scattering characteristics that allows a fast (real-time process) and cost-effective measurement having a high accuracy. The method according to the present invention comprises: irradiating a first optical radiation onto the sample (4), wherein the first radiation is substantially perpendicularly irradiated onto the surface of the sample (4), and determining a first reflection spectrum (10) resulting from reflection of the first radiation on the sample (4); irradiating a second optical radiation onto the sample (4), wherein the second radiation is irradiated onto the surface of the sample (4) under an oblique angle, and determining a second reflection spectrum (12) resulting from reflection of the second radiation on the sample (4); determining a minimum of the first reflection spectrum (10), determining a minimum of the second reflection spectrum (12), and determining the layer thickness and the refractive index of the sample (4) using the minimum of the first reflection spectrum (10) and the minimum of the second reflection spectrum (12).


The present invention relates to a method for calibrating a pyrometer and a method for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art. According to the invention, the pyrometer (1) is calibrated by: providing an integrating sphere (8), irradiating the integrating sphere (8) with radiation corresponding to a predetermined temperature and to the wavelength detection characteristics of the pyrometer, wherein the radiation which is irradiated into the integrating sphere (8) is calibrated by comparison of the flux density leaving through the window plate (10) with the emitted light of a calibrated black-body source and stabilized according to the predetermined radiation-temperature using a detector (9) which is located inside the integrating sphere (8), measuring, by the pyrometer (1), a thermal radiation signal of the integrating sphere (8), determining an apparent temperature of the integrating sphere (8) from measured thermal radiation signal of the integrating sphere (8), and wherein the pyrometer (1) is calibrated by assigning the predetermined radiation temperature of the integrating sphere (8) with the thermal radiation signal measured by the pyrometer (1), wherein the surface area of the semiconducting wafer (2) corresponds with the surface area of the opening (10) of the integrating sphere (8).


Patent
LayTec GmbH | Date: 2011-03-23

The present invention relates to a pyrometer which is adapted for detecting radiation in the range of 250 to 450 nm. It is an object of the present invention to provide a pyrometer and a method for determining the temperature of a matter thermally emitting only ultraviolet-radiation which overcome the disadvantages of the prior art. The pyrometer according to the present invention is adapted for detecting radiation in the range of 250 to 450 nm and comprises: a detector (9) having an active area (10) adapted for measuring thermal radiation, a longpass filter (7) having a cut-off wavelength in the range of 400 to 450 nm, means (11) adapted for alternately activating and deactivating the longpass filter (7), means (12) adapted for measuring a first thermal radiation signal when the longpass filter (7) is deactivated and adapted for measuring a second thermal radiation signal when the longpass filter (7) is activated, and means (13) adapted for determining a temperature corresponding to the measured thermal radiation from a difference of the first radiation signal and the second radiation signal.


The present invention relates to a method and an apparatus for determining the layer thickness and the refractive index of a sample. It is an object of the present invention to provide a method for determining the layer thickness of a sample (layer) having high light scattering characteristics that allows a fast (real-time process) and cost-effective measurement having a high accuracy. The method according to the present invention comprises: irradiating a first optical radiation onto the sample (4), wherein the first radiation is substantially perpendicularly irradiated onto the surface of the sample (4), and determining a first reflection spectrum (10) resulting from reflection of the first radiation on the sample (4); irradiating a second optical radiation onto the sample (4), wherein the second radiation is irradiated onto the surface of the sample (4) under an oblique angle, and determining a second reflection spectrum (12) resulting from reflection of the second radiation on the sample (4); determining a minimum of the first reflection spectrum (10), determining a minimum of the second reflection spectrum (12), and determining the layer thickness and the refractive index of the sample (4) using the minimum of the first reflection spectrum (10) and the minimum of the second reflection spectrum (12).


The present invention relates to a method for calibrating a pyrometer, a method for determining the temperature of a semiconducting wafer and a system for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art. According to the invention, during the heating process, a first optical radiation having a first wavelength is irradiated onto the calibration sample (12), a first reflection signal resulting from reflection of the first radiation on the calibration sample (12) is measured, and a first reflectance of the calibration sample (12) for the first wavelength from the measured first reflection signal is determined, a second optical radiation having a second wavelength is irradiated onto the calibration sample (12), the first wavelength and the second wavelength being different from each other, a second reflection signal resulting from reflection of the second radiation on the calibration sample (12) is measured, and a second reflectance of the calibration sample (12) for the second wavelength from the measured second reflection signal is determined and, by the pyrometer (1), a thermal radiation signal received from the calibration sample (12) is measured, wherein a temperature of the calibration sample (12) is determined from the ratio of the first reflectance and the second reflectance and wherein the pyrometer (1) is calibrated by assigning the determined temperature of the calibration sample (12) with the thermal radiation signal measured by the pyrometer (1).


An apparatus for measuring a curvature of a surface (1), comprising means for irradiating a first light beam (S1), a second light beam (S2) and a third light beam (S3) onto a surface (1) of a sample (12), a detector (5) comprising at least one detector plane and being adapted to detect a first position of the reflected first light beam (S1), a second position of the reflected second light beam (S2) and a third position of the reflected third light beam (S3) in the at least one detector plane, means for determining a first distance between the first position of the first light beam (S1) and the third position of the third light beam (S3) and a second distance between the second position of the second light beam (S2) and the third position of the third light beam (S3), and means for determining a mean curvature of the surface from the first distance and the second distance. The first light beam (S1), the second light beam (S2) and the third light beam (S3) are parallel to each other and the first light beam (S1) is spaced apart from a plane defined be the second light beam (S2) and the third light beam (S3).


The present invention relates to a method for calibrating a pyrometer, a method for determining the temperature of a semiconducting wafer and a system for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art. According to the invention, during the heating process, a first optical radiation having a first wavelength is irradiated onto the calibration sample (12), a first reflection signal resulting from reflection of the first radiation on the calibration sample (12) is measured, and a first reflectance of the calibration sample (12) for the first wavelength from the measured first reflection signal is determined, a second optical radiation having a second wavelength is irradiated onto the calibration sample (12), the first wavelength and the second wavelength being different from each other, a second reflection signal resulting from reflection of the second radiation on the calibration sample (12) is measured, and a second reflectance of the calibration sample (12) for the second wavelength from the measured second reflection signal is determined and, by the pyrometer (1), a thermal radiation signal received from the calibration sample (12) is measured, wherein a temperature of the calibration sample (12) is determined from the ratio of the first reflectance and the second reflectance and wherein the pyrometer (1) is calibrated by assigning the determined temperature of the calibration sample (12) with the thermal radiation signal measured by the pyrometer (1).


Grant
Agency: European Commission | Branch: FP7 | Program: CP-IP | Phase: NMP.2012.1.4-1 | Award Amount: 13.40M | Year: 2013

In this proposed integrating project we will develop innovative in-line high throughput manufacturing technologies which are all based on atmospheric pressure (AP) vapour phase surface and on AP plasma processing technologies. Both approaches have significant potential for the precise synthesis of nano-structures with tailored properties, but their effective simultaneous combination is particularly promising. We propose to merge the unique potential of atmospheric pressure atomic layer deposition (AP-ALD), with nucleation and growth chemical vapour deposition (AP-CVD) with atmospheric pressure based plasma technologies e.g. for surface nano-structuring by growth control or chemical etching and, sub-nanoscale nucleation (seed) layers. The potential for cost advantages of such an approach, combined with the targeted innovation, make the technology capable of step changes in nano-manufacturing. Compatible with high volume and flexible multi-functionalisation, scale-up to pilot-lines will be a major objective. Pilot lines will establish equipment platforms which will be targeted for identified, and substantial potential applications, in three strategically significant industrial areas: (i) energy storage by high capacity batteries and hybridcapacitors with enhanced energy density, (ii) solar energy production and, (iii) energy efficient (lightweight) airplanes. A further aim is to develop process control concepts based on in-situ monitoring methods allowing direct correlation of synthesis parameters with nanomaterial structure and composition. Demonstration of the developed on-line monitoring tools in pilot lines is targeted. The integrating project targets a strategic contribution to establishing a European high value added nano-manufacturing industry. New, cost efficient production methods will improve quality of products in high market value segments in industries such as renewable energy production, energy storage, aeronautics, and space. DoW adaptations being made responding on requests from Phase-2 Evaluation Report In Phase-2 of the evaluation process, a number of points were noted by the evaluators where the project had insufficient information or could benefit from upgrading or justification. Our response and actions against each point raised has been summarized and send to the project officer, Dr. Rene Martins, in a separate document.

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