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Nanchang, China

Sun L.-H.,Shanghai Institute of Technology | Zou J.,Shanghai Institute of Technology | Xu J.-Y.,Shanghai Institute of Technology | Li W.-B.,Lattice Power
Rengong Jingti Xuebao/Journal of Synthetic Crystals

GaN films with the structure of 7 layer InGaN/GaN MQWs were grown on a and c plane sapphire substrates respectively by MOCVD method. The samples were characterized by XRD, Raman spectrometer and absorption spectrum. The results show that FWHM of GaN film grown on a plane sapphire (sample A) and GaN film grown on c plane sapphire (sample B) are respectively 781.2 arcsec and 979.2 arcsec. The existence compressive stress in sample A and sample B are respectively 0.8523 GPa and 1.2714 GPa. Band gap (theoretical value is 3.4 eV) of sample A and sample B are respectively 3.38 eV and 3.37 eV. The above data show that GaN films grown on a plane sapphire have better crystal quality and optical property. ©, 2015, Chinese Ceramic Society. All right reserved. Source

Lattice Power | Date: 2009-03-24

Amplifiers; Electric light switches; Electroacoustic transducers; Electron tubes; Electronic and optical communications instruments and components, namely, cable television transmitters; Electronic notice boards; Emergency warning lights; Flash lamps; Flashing safety lights; Helmet safety lights; Light pens; Luminous house numbers; Luminous pointers; Luminous signs; Photovoltaic cells; Semiconductor devices; Semiconductors; Silicon chips; Silicon wafers; Transistors; Video screens.

One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.

Lattice Power | Date: 2012-08-03

A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.

Shineon Beijing Technology Co. and Lattice Power | Date: 2013-11-19

A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue.

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