News Article | May 5, 2017
— The Global LED Chip Market Research Report 2017 is a professional and in-depth study on the current state of the LED Chip Market. This report studies LED Chip in Global market, especially United States, EU, China, Japan, South Korea and Taiwan. focuses on top manufacturers in global market, with capacity, production, price, revenue and market share for each manufacturer covering top manufacturers in global market, with capacity, production, price, revenue and market share for each manufacturer, covering Nichia, Philips Lumileds, Cree, Toyoda Gosei, OSRAM, Epistar, Tyntek, Genesis Photonics, Lextar, Formosa Epitaxy, OPTO-TECH, Seoul Semiconductor, Samsung, LG Innotek, San'an Opto, Changelight, Aucksun, ETI, Lattice Power, Tong Fang and HC SemiTek. Market Segment by Regions, this report splits Global into several key Regions, with sales (consumption), revenue, market share and growth rate of LED Chip in these regions, from 2017 to 2022 (forecast), like United States, EU, China, Japan, South Korea and Taiwan. Firstly, LED Chip Market On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into Lateral Chip, Vertical Chip and Flip Chip. On the basis on the end users/applications, this report focuses on the status and outlook for major applications/end users, consumption (sales) , market share and growth rate of LED Chip for each application, including Automotive, Backlight Sources, Display Screen, Signage and Others. View more details about this report @ http://www.reportsweb.com/global-led-chip-market-research-report-2017 Few points from Table of Contents 5 Global LED Chip Production, Revenue (Value) , Price Trend by Type 5.1 Global LED Chip Production and Market Share by Type (2012-2017) 5.2 Global LED Chip Revenue and Market Share by Type (2012-2017) 5.3 Global LED Chip Price by Type (2012-2017) 5.4 Global LED Chip Production Growth by Type (2012-2017) 6 Global LED Chip Market Analysis by Application 6.1 Global LED Chip Consumption and Market Share by Application (2012-2017) 6.2 Global LED Chip Consumption Growth Rate by Application (2012-2017) 6.3 Market Drivers and Opportunities 6.3.1 Potential Applications 6.3.2 Emerging Markets/Countries 7 Global LED Chip Manufacturers Profiles/Analysis 7.1 Nichia 7.1.1 Company Basic Information, Manufacturing Base, Sales Area and Its Competitors 7.1.2 LED Chip Product Category, Application and Specification 220.127.116.11 Product A 18.104.22.168 Product B 7.1.3 Nichia LED Chip Capacity, Production, Revenue, Price and Gross Margin (2012-2017) 7.1.4 Main Business/Business Overview 7.2 Philips Lumileds 7.2.1 Company Basic Information, Manufacturing Base, Sales Area and Its Competitors 7.2.2 LED Chip Product Category, Application and Specification 22.214.171.124 Product A 126.96.36.199 Product B 7.2.3 Philips Lumileds LED Chip Capacity, Production, Revenue, Price and Gross Margin (2012-2017) 7.2.4 Main Business/Business Overview 7.3 Cree 7.3.1 Company Basic Information, Manufacturing Base, Sales Area and Its Competitors 7.3.2 LED Chip Product Category, Application and Specification 188.8.131.52 Product A 184.108.40.206 Product B 7.3.3 Cree LED Chip Capacity, Production, Revenue, Price and Gross Margin (2012-2017) 7.3.4 Main Business/Business Overview For more information, please visit http://www.reportsweb.com/global-led-chip-market-research-report-2017
Wang Y.,Nanchang University |
Xiong C.,Nanchang University |
Xiong C.,Lattice Power |
Wang G.,Nanchang University |
And 4 more authors.
Guangxue Xuebao/Acta Optica Sinica | Year: 2010
GaN-based light-emitting diodes (LED) thin films were successfully transferred from the original Si(111) substrate to Si substrate via bonding, copper substrate and copper-chromium substrate via electroplating respectively, and then the vertical-structure LED were fabricated. The aging characteristic of those LED was investigated. The result indicated that the devices of copper substrate have the most stable photoelectric properties. These different performances were attributed to the different stress states and thermal conductivities, and it was possible that the main influencing factor of reliability of LED was the stress state of the device.
Liu J.,Nanchang University |
Feng F.,Nanchang University |
Zhou Y.,Lattice Power |
Zhang J.,Nanchang University |
And 2 more authors.
Applied Physics Letters | Year: 2011
The electrical characteristics of Al/Ti/Au contact to N-polar n-GaN on Si substrate are investigated. It was found that a pre-treatment to the surface with Ar plasma could significantly enhance the stability of Al/Ti/Au contact. Forward voltage of the pre-treated sample was stabilized at about 3.23 V upon 1000 h aging under 900 mA and room temperature. In contrast, forward voltage of the untreated sample increased from 3.52 V to 4 V after 24 h aging. Those differences between the Ar plasma treated sample and untreated sample were attributed to the increase of the VN concentrate near surface of n-GaN by the Ar plasma treatment. © 2011 American Institute of Physics.
Tao X.-X.,Nanchang University |
Wang L.,Nanchang University |
Wang L.,Lattice Power |
Liu Y.-S.,Lattice Power |
And 3 more authors.
Journal of Luminescence | Year: 2011
We provide a large FP cavity model to analyze the effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes (VLEDs). It shows that the distance (d) between the active region and the metal reflector has a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency corresponding to the optimal d is about three times the neighboring minimum. The reflector of different metals is considered in this model and the results show that the optimal d and the value of the maximum in the extraction efficiency are directly related to the type of metal, which can be attributed to varied reflection phase shift and reflectivity on different metals, respectively. © 2011ElsevierB.V.Allrightsreserved.
Lattice Power and Shineon Beijing Technology Co. | Date: 2014-03-26
A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure (110) on a sapphire substrate (100); thinning and polishing the sapphire substrate (100); coating a reflecting compound metal layer (120) on the gallium nitride-based semiconductor multilayer structure (110) by evaporating; coating a first glue (130) on the reflecting compound metal layer (120) and solidifying the first glue (130) with a first temporary substrate (140); peeling the sapphire substrate (100) off by laser; coating a second glue (150) on the peeling surface and solidifying the second glue (150) with a second temporary substrate (160); removing the first temporary substrate (140) and the first glue (130); bonding the reflecting compound metal layer (120)with a permanent substrate (180) by eutectic bonding (170); removing the second temporary substrate (160) and the second glue (150).
Shineon Beijing Technology Co. and Lattice Power | Date: 2013-11-19
A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue.
Lattice Power | Date: 2011-07-06
One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.
Lattice Power | Date: 2012-08-03
A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
News Article | June 27, 2015
HONG KONG, April 9, 2015 /PRNewswire/ -- Shunfeng International Clean Energy (SFCE) announced today that it signed a strategic co-operation agreement with Aviation Industry Corporation of China (AVIC) to form a joint venture aimed at promoting Energy Management Contracting (EMC) projects and providing integrated energy saving solutions to the customers. AVIC and SFCE's partnership will leverage this investment model to advance the increased adoption of clean energy projects. "As we look to the upcoming year, we plan to introduce solutions for three major markets on a global scale: low-carbon cities, low-carbon communities including commercial customers, and low-carbon households. Our partnership with AVIC will help to implement this vision and increase our efforts to rollout integrated low-carbon energy-saving solutions. The EMC model will bring about an overall energy-savings up to 50% to 70% of costs from our green solutions," said Eric Luo, CEO of SFCE. SFCE began to diversify its business in 2014 through the acquisition and integration of major global clean energy brands. It expanded its solar products line and services offering while adding capabilities in energy storage and smart micro grid to its EPC and operation and maintenance services. In 2015, SFCE signed an agreement with Nobao Renewable Energy Holdings, a global leader in ground source heat pump (GSHP) technology industry, to jointly develop EMC services. Via equity adjustment, SFCE has also recently acquired a 51% ownership stake in Lattice Power, a mass producer of LED lighting products. Combining these elements, SFCE became an integrated clean energy solution provider, from solar power generation to urban lightings, centralized heating and cooling for cities, as well as energy storage and smart urban energy maintenance and operations. Based on these technologies and products application, SFCE is ready to roll out its complete and highly efficient low-carbon energy-saving solutions for cities, communities, commercial customers and households. Yao Jiangtao, General Manager of AVIC Trust said, "Developing new energy solutions is crucial to managing pollution at the source and improving our environment. As a state-owned non-banking financial institution, AVIC Trust has a responsibility to create value for society when pursuing sustainable business goals. Working with SFCE, AVIC Trust can help to develop new EMC turn key projects which provide urban and commercial entities with systematic energy-saving solutions. We are working with our partners to introduce win-win solutions for businesses and society which allow cities to develop a cleaner future." Shunfeng International Clean Energy Limited (SFCE) is committed to becoming the largest low-carbon, integrated, clean energy generation provider globally. Through strategic acquisitions and integration, SFCE owns a number of well-known product and technology brands in the industry. SFCE fosters a continuous improvement in energy generation including in solar, wind, ocean power and ground source heat pumps, combined with energy management and storage capabilities. SFCE aims to provide clean energy solutions to large scale public and commercial users such as business facilities, data centers, hotels, large scale public facilities, industrial enterprises, office buildings, schools, hospitals, sports stadiums and households. SFCE's energy solutions can achieve energy cost reductions of 50% - 70%, creating energy generation choices for its customers to reduce both carbon emissions and energy costs. About Aviation Industry Corporation of China (AVIC) and AVIC Trust AVIC is a state-owned corporation under the supervision of central government and a state authorized investment institution. Its business units cover defense, transportation aircraft, engine, helicopter, avionics and systems, general aviation, aviation research, flight test, trade and logistics, assets management, finance services, engineering planning and construction, automobile and etc. It owns almost 200 member companies, over 20 listed companies and employs over 400,000 staff. AVIC Trust Co., Ltd. is a company established by AVIC, Overseas-Chinese Banking Corporation and other enterprises. It is a joint-stock non-bank financial institution with China Banking Regulation Commission's approval and also a foreign invested enterprise approved by Ministry of Commerce. The company is based in Nanchang, Jiangxi province. It is one of the important platforms for financial operations of AVIC.