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Cao C.,Lasertel | Fan L.,Lasertel | Ai I.,Lasertel | Li J.,Lasertel | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

This paper gives an overview of recent development of high-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel. Focused development of device design and MBE growth processes has yielded significant improvement in power conversion efficiency (PCE) of 50-W CW TE/TM polarized 808-nm laser bars. We have achieved CW PCEs of 67 % to 64 % at heat-sink temperature of 5°C and 25°C, respectively. Ongoing life-testing indicates that the reliable powers of devices based on the new developments exceed those of established, highly reliable, production designs. © 2010 Copyright SPIE - The International Society for Optical Engineering.


Gupta G.,Los Alamos National Laboratory | Thorp J.C.,Arizona State University | Thorp J.C.,Lasertel | Mara N.A.,Los Alamos National Laboratory | And 3 more authors.
Journal of Applied Physics | Year: 2012

We have investigated the morphology, structure, and annealing response of nanoporous Au films synthesized via electrochemical dealloying of amorphous AuxSi1-x co-deposited films on Si substrates. The starting Au alloy film concentrations were varied from x=0.09 to 0.41 and the resulting nanoscale porous films were characterized by electron microscopy and Rutherford backscattering techniques. Our observations provide a systematic description of the nanoporous Au film morphology, porosity, and degree of collapse as a function of starting AuxSi1-x alloy composition. The characteristic pore sizes increased from 10 to 45 nm and the porosity increased from 45% to 70% for the nanoporous Au films with decrease in the starting Au concentrations. The degree of film collapse due to dealloying also increased with decreasing Au concentration. The electrochemical dealloying process for nanoporous film formation was observed to change from a layer-by-layer dealloying process to a localized, percolation-dominated process as the Au concentration was decreased from 40 to 9 at.%. The thin film porous synthesis approach presented here enables the integration of bottom up dealloying self-assembly with top down microelectronics-based fabrication techniques, making it a useful new approach for Si-based microsystem applications. © 2012 American Institute of Physics.


Fan L.,Lasertel | Cao C.,Lasertel | Thaler G.,Lasertel | Caliva B.,Lasertel | And 6 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2011

We report on the first demonstration of long-pulse (milliseconds) operation of aluminum-free active-region 8xx-nm diode laser bar at heat-sink temperature of 180 °C. This is, to the best of our knowledge, the highest published operating temperature for a long-pulse 8xx-nm laser bar with Al-free active region. The laser bars have very robust performance at 130 °C without any active cooling. At this high temperature, the laser bars provide both high peak power (60 W at 100 A) and good pulse shape for tens of milliseconds pulse width, maintaining high energy per pulse. The dependence of laser output pulse shape on the pulse width and pump current is experimentally investigated at 130 °C. We find that the transient output power of the laser bar follows P(t) = A exp(-t/t 0) + Bt + C, where A, B, C, and t 0 are fitting parameters that are pulse width and current dependent. We have also investigated the transient thermal behavior of the laser bar at high temperature and high pump current. © 2006 IEEE.


Fan L.,Lasertel | Cao C.,Lasertel | Thaler G.,Lasertel | Nonnemacher D.,Lasertel | And 8 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

We report on the high-power high-temperature long-pulse performance of the 8XX-nm diode laser bars and arrays, which were recently developed at Lasertel Inc. for diode laser pumping within high-temperature (130 °C) environment without any cooling. Since certain energy in each pulse is required, the diode laser bars have to provide both high peak power and a nice pulse shape at 130 °C. Optimizing the epi-structure of the diode laser, the laser cavity and the distribution of waste heat, we demonstrate over 40-millisecond long-pulse operation of the 8XX-nm CS bars at 130 °C and 100 A. Pumping the bar with 5-Hz frequency 15-millisecond rectangular current pulses, we generate over 60 W peak power at 100 A and 130 °C. During the pulse duration, the pulse shape of the CS bars is well-maintained and the power almost linearly decays with a rate of 1.9% peak power per millisecond at 130 °C and 100 A. Regardless of the pulse shape, this laser bar can lase at very high temperature and output pulse can last for 8 ms/2ms at 170 °C/180 °C (both driven by 60 A current pulses with 5-Hz frequency, 10 millisecond pulse width), respectively. To the best of our knowledge, this is the highest operating temperature for a long-pulse 8XX-nm laser bar. Under the condition of 130 °C and 100 A, the laser bars do not show any degradation after 310,000 10-millisecond current pulse shots. The performance of stack arrays at 130 °C and 100 A are also presented. The development of reliable high-temperature diode laser bar paves the way for diode laser long-pulse pumping within a high-temperature environment without any cooling.


Koleske D.D.,Sandia National Laboratories | Lee S.R.,Sandia National Laboratories | Thaler G.,Sandia National Laboratories | Thaler G.,Lasertel | And 3 more authors.
Applied Physics Letters | Year: 2010

The surface-step evolution of InGaN quantum-wells (QWs) was studied on GaN (0001). While the GaN template is dominated by single-monolayer steps the frequency of multiple-layer steps increases significantly when InGaN/GaN single- or multiple-QWs are grown. It is proposed that the InGaN multiple-layer step structure arises to partially accommodate the in-plane film strain which is insufficient to trigger bulk InGaN relaxation. This intrinsic multiple-layer step restructuring, when coupled with the strong piezoelectric fields present in the wurtzite group III-nitrides, could explain the enhanced carrier localization in InGaN QWs. © 2010 American Institute of Physics.


A laser diode array having a plurality of diode bars (16) sandwiched between thermal expansion matched spacers (14). The array is mounted on a heatsink 30 with intervening ceramic layer 28 using a hard solder (16). The spacers are formed of an aluminum/diamond composite, a silver/diamond composite or a silver/aluminum alloy/diamond composite material having a thermal expansion that closely matches that of the laser bars.


Lasertel | Entity website

Lasertel uses many proprietary manufacturing processes to build the most efficient and powerful laser diode components on the market. From Molecular Beam Epitaxy (MBE) to the revolutionary Epitaxial Mirror on Facet (EMOF) technology, our engineers build components with unmatched durability, reliability and performance ...


Lasertel | Entity website

LightForm Direct Diode Laser Systems Lasertels LightForm product class pairs our industry leading CW laser diode arrays with advanced beam shaping optics. These highly customizable systems allow for limitless power options, beam size and beam shapes for a wide variety of applications ...


Lasertel | Entity website

Lasertel, a subsidiary of Selex Galileo Inc., was founded in 2000 to design, manufacture, and produce high-power semiconductor lasers for a variety of markets including defense, industrial, medical and graphic arts ...

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