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Gupta G.,Los Alamos National Laboratory | Thorp J.C.,Arizona State University | Thorp J.C.,Lasertel | Mara N.A.,Los Alamos National Laboratory | And 3 more authors.
Journal of Applied Physics | Year: 2012

We have investigated the morphology, structure, and annealing response of nanoporous Au films synthesized via electrochemical dealloying of amorphous AuxSi1-x co-deposited films on Si substrates. The starting Au alloy film concentrations were varied from x=0.09 to 0.41 and the resulting nanoscale porous films were characterized by electron microscopy and Rutherford backscattering techniques. Our observations provide a systematic description of the nanoporous Au film morphology, porosity, and degree of collapse as a function of starting AuxSi1-x alloy composition. The characteristic pore sizes increased from 10 to 45 nm and the porosity increased from 45% to 70% for the nanoporous Au films with decrease in the starting Au concentrations. The degree of film collapse due to dealloying also increased with decreasing Au concentration. The electrochemical dealloying process for nanoporous film formation was observed to change from a layer-by-layer dealloying process to a localized, percolation-dominated process as the Au concentration was decreased from 40 to 9 at.%. The thin film porous synthesis approach presented here enables the integration of bottom up dealloying self-assembly with top down microelectronics-based fabrication techniques, making it a useful new approach for Si-based microsystem applications. © 2012 American Institute of Physics. Source


Koleske D.D.,Sandia National Laboratories | Lee S.R.,Sandia National Laboratories | Thaler G.,Sandia National Laboratories | Thaler G.,Lasertel | And 3 more authors.
Applied Physics Letters | Year: 2010

The surface-step evolution of InGaN quantum-wells (QWs) was studied on GaN (0001). While the GaN template is dominated by single-monolayer steps the frequency of multiple-layer steps increases significantly when InGaN/GaN single- or multiple-QWs are grown. It is proposed that the InGaN multiple-layer step structure arises to partially accommodate the in-plane film strain which is insufficient to trigger bulk InGaN relaxation. This intrinsic multiple-layer step restructuring, when coupled with the strong piezoelectric fields present in the wurtzite group III-nitrides, could explain the enhanced carrier localization in InGaN QWs. © 2010 American Institute of Physics. Source


Lasertel | Entity website

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Lasertel | Entity website

QCW LASER DIODES Lasertel is the worlds leading supplier of pulsed laser diode arrays. Available in a broad range of conductively cooled package types, bar geometries and wavelengths, Lasertels QCW laser diode products are optimized for your application ...


Lasertel | Entity website

LightForm Direct Diode Laser Systems Lasertels LightForm product class pairs our industry leading CW laser diode arrays with advanced beam shaping optics. These highly customizable systems allow for limitless power options, beam size and beam shapes for a wide variety of applications ...

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