LaMIPS

Colombelles, France
Colombelles, France
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Pagazani J.,University Paris Est Creteil | Lissorgues G.,University Paris Est Creteil | Mehdaoui A.,Coventor SARL | Schropfer G.,Coventor SARL | And 3 more authors.
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015 | Year: 2015

The work is related to an Agile Filter which is a specific RF block to be inserted between an antenna and a first stage of pre-amplification in future on board antenna systems or any future multi-purpose communications terminals. It will be able to process signals in the frequency range between 2 and 18 GHz with target insertion loss below 3dB. The basic idea of the demonstrator studied and developed in this project is to evaluate a SiP approach combining heterogeneous technologies and 3D integration and packaging. This paper presents the process flow used to design, fabricate and integrate in 3D a tunable RF filter which tunability is obtained by the use of MEMS varactors based on a copper on glass technology and stacked on micro-PCD for the electronic control functions. MEMS+ parameterized structures for RF MEMS varactor designs are presented with dimension constraints to be compatible with the space available at the end of each combline sub-filter. Indeed, the MEMS capacitors are composed of a mobile square membrane of 210μm by side and overall size of 600μm. In addition, these RF MEMS tunable capacitor models were automatically transferred into VerilogA for rapid system-level simulation usable further in ADS environment to verify the RF performances. © 2015 IEEE.


Dinh T.V.,LaMIPS | Pasquet D.,LaMIPS | Descamps P.,LaMIPS | Lesenechal D.,ESIEE | And 3 more authors.
2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013 | Year: 2013

This paper presents a simple model of mutual coupling between 2 bonding wires. The model has been compared to 3D full wave electromagnetic simulation up to 20 GHz. A good accordance was obtained. © 2013 IEEE.


Tran L.N.,Cergy-Pontoise University | Bourdel E.,Cergy-Pontoise University | Quintanel S.,Cergy-Pontoise University | Pasquet D.,LaMIPS
International Journal of Microwave and Wireless Technologies | Year: 2010

In order to perform an accurate design, in particular in non-linear circuit, the equivalent circuit of inductors must be precisely described in a wide frequency band. Many models have been proposed to describe the behavior of inductors on lossy substrate. They consist of a great number of elements, often suggested by physical phenomena. Most of them cannot be extracted from measurements. In this paper, we propose a model composed only of elements that can be analytically extracted from measurement results. © 2010 Cambridge University Press and the European Microwave Association.


Quintanel S.,ENSEA Cergy | Pasquet D.,LaMIPS | Bourdel E.,ENSEA Cergy | Duperrier C.,ENSEA Cergy | And 3 more authors.
81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013 | Year: 2013

This paper describes a simple technique for on wafer passive multi-port circuits characterization. This method gives an efficient measurement of the scattering S-parameters of these devices at their ports reference planes. Furthermore, it provides cost saving in terms of used wafer surface and equipments by using an universal two-port Vector Network Analyzer (VNA). This method is applied to the characterization of a branch-line coupler designed on a lossy silicon substrate at millimeter waves (30 GHz). The de-embedding and the experimental procedures are presented in this paper. The experimental measurements extracted from our method show a good agreement with those made with a four-port VNA. © 2013 IEEE.


Rayas-Sanchez J.E.,University of Guadalajara | Pasquet D.,LaMIPS | Szendrenyi B.,Advantest Corporation | Gupta M.S.,University of California at San Diego
IEEE Microwave Magazine | Year: 2015

Reports on major events and activities that were part of the MTT-S Mexico trip. © 2000-2012 IEEE.


Perin M.,NXP Semiconductors | Darfeuille S.,NXP Semiconductors | Aymard O.,NXP Semiconductors | Gamand P.,NXP Semiconductors | And 2 more authors.
Analog Integrated Circuits and Signal Processing | Year: 2012

A low-power Digitally-controlled Variable Gain Attenuator and Low Noise Amplifier are implemented in a 40-GHz f T 0.25-μm BiCMOS process. They cover the sub-GHz ISM bands for automotive applications such as Remote Keyless Entry. The LNA achieves wideband input matching independent of the variable gain, as well as high reverse isolation, thanks to a partial feedback technique. Its variable gain is based on a resistor-chain gain-control technique, leading to fine gain steps and constant output impedance. This LNA is designed with 15 gain steps of 1 dB. The simulated results for the maximum gain show a Transducer Power Gain of 16.5 dB, a Noise Figure of 2.4 dB and respective input and output IP 3 of -12.1 and +4.5 dBm, while only drawing 1.45 mA from a 2.7 V power supply. The measurement results are slightly degraded because of wire-bonding couplings in the package. This LNA is preceded by a five coarse steps (about 11 dB each) digitally-programmable attenuator based on a hybrid T and R-2R network. Together with the LNA, more than 50 dB of gain dynamic range is achieved. For high attenuation steps, input IP 3 of more than +18 dBm is reached. © 2012 Springer Science+Business Media, LLC.


Andrei C.,NXP Semiconductors | Pasquet D.,LaMIPS
Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting | Year: 2011

An innovative method for verification of de-embedding errors after inductor on-wafer measurements is presented. This first de-embedding verification method, there were no references found in literature, is easy to implement by designing a LC circuit with a Metal Insulator Metal (MIM) capacitor inside the Ground-Signal-Ground (GSG) test structure used for inductor characterization. The S parameter measurements of LC circuit (L-inductor under test, C-MIM) and of an "open dummy" including the MIM, are used to cross-check the inductor measurements in order to verify the de-embedding accuracy. This verification allows an easy identification of S-parameter measurement issues and of de-embedding in-accuracies, and futures an important gain of time for small signal equivalent circuit extraction. The method has been validated in the case of "8-shaped" inductor fabricated in QuBiC (Quality Bipolar CMOS) process by measurements up to 50 GHz. © 2011 IEEE.


Palczynska A.,Wroclaw University of Technology | Wymyslowski A.,Wroclaw University of Technology | Bieniek T.,Polish Institute of Electron Technology | Janczyk G.,Polish Institute of Electron Technology | And 2 more authors.
2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014 | Year: 2014

Cross-talk (XT) is a phenomenon affecting signals propagated in electronic circuitry. In a general case if a signal is transmitted in one system it creates an undesired effect in another, which is due to the crosstalk. The crosstalk is usually caused by parasitic capacitances, inductances, or conductive coupling. In wireless communication, crosstalk is often denoted as a co-channel interference, and is related to adjacent-channel interference. The above is especially important for high frequency ranges, which are used in wireless RF applications. In integrated circuit design, crosstalk normally refers to a signal affecting another nearby signal. Usually the coupling is capacitive but other forms of coupling and effects on signal further away are sometimes important as well, especially in analogue and digital circuits. The main problem is how to prevent this phenomena in order to sustain the signal integrity. There are a wide variety of possible fixes, with the increased spacing, wire reordering and/or appropriate shielding. In fact it requires application of specific design rules during the prototyping stage. In the paper the experimental and numerical analysis of a crosstalk problem is presented. The experimental measurement were performed on manufactured test samples prepared on Si substrates with predefined configuration of aluminium lines / wires. Numerical modelling was based on finite element method (FEM) including both 2D and 3D simulations. © 2014 IEEE.


Pasquet D.,LaMIPS | Andrei C.,Philips | Lesenechal D.,LaMIPS | Descamps P.,LaMIPS
2010 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, MSMW'2010 | Year: 2010

The noise parameters are useful for the design of low noise amplifiers. They are usually deducted by the measurement of the noise figure that varies with the impedance presented at the input as in Eq. 1. F= FMIN + RN/ ℛ YS|YS - YOPT|2 (1) where YS is the admittance presented at the input and Y OPT is the admittance for which the noise figure has its lower value FMIN. RN is the noise resistance that characterizes the sensitivity to the variation of the impedance. Many optimization methods [1] have been developed in order to reach FMIN, RN and Y OPT from many measurement points. © 2010 IEEE.

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