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Tian L.,Inner Mongolia University of Technology | Tian L.,Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | Li R.,Inner Mongolia University of Technology | Li R.,Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | And 12 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2013

The La-doped CdS films were grown by chemical bath deposition on glass substrates, and annealed in nitrogen environment. The impacts of the growth conditions, such as the solution concentrations, bath temperature, La contents, and annealing temperature, on its properties were evaluated. The La-doped CdS films were characterized with X-ray diffraction, and X-ray photoelectron spectroscopy. The results show that the La-doping significantly affects the microstructures and electro-optical properties of the CdS films. For example, the La-doping resulted in an observable transition from cubic to hexagonal phase, with (111) diffraction peak remaining unchanged;a narrower band-gap, and an increase of the S content, closer to the ideal stoichiometries of Cd and S. Source

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