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Schwarz C.,Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany | Kaiser M.,Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany | Jacob S.F.,Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany | Schindler C.,Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

The fabrication and characterization of resistive memory cells based on a silver/silicon oxide stack with a printed polymer electrode is described. Memory cells were fabricated on standard silicon wafers as well as on flexible polymer foils. The partially printed cells showed low switching voltages and currents. Together with the possibility of multi-level data storage even on flexible substrates, the potential for low power, high density, and printed cheap memory cells is demonstrated. Memristor with printed electrode and its current-voltage characteristic. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Loading Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany collaborators
Loading Laboratory for Microsystems TechnologyMunich University of Applied SciencesLothstrasse 3480335MunichGermany collaborators