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Ognev A.,Institute of Automation and Control Processes | Stebliy M.E.,Laboratory for Laser And Chemical Thin Film Technology | Samardak A.S.,Laboratory for Laser And Chemical Thin Film Technology | Nogaret A.,University of Bath | Chebotkevich L.A.,Institute of Automation and Control Processes
Solid State Phenomena | Year: 2011

The remagnetization process and the distribution of magnetic moments in arrays of trilayer nanodisks Co(10 nm)/Pd(0.8 nm)/Co(10 nm) with diameters D = 200 and 400 nm were studied by the magnetooptical Kerr effect (MOKE) and magnetic force microscopy (MFM). It is shown that in the nanodisks with D = 200 nm the magnetisation reversal process can be carried out by the vortex states or one-domain configurations with the antiparallel orientation of moments in the adjacent ferromagnetic layers. In arrays of nanodisks with D = 400 nm the vortex states are formed only. Source


Samardak A.,Laboratory for Laser And Chemical Thin Film Technology | Sukovatitsina E.,Laboratory for Laser And Chemical Thin Film Technology | Ognev A.,Laboratory for Laser And Chemical Thin Film Technology | Anisimova M.,Laboratory for Laser And Chemical Thin Film Technology | And 2 more authors.
Solid State Phenomena | Year: 2011

This paper is devoted to the investigation of crystalline structure, surface morphology, magnetic anisotropy, coercive force and domain structure of spin-valves with a single and double MgO barrier layers. It is shown that domain structure and magnetization reversal are the same for both systems, but otherwise the behavior of tunnel magnetoresistance is different. The approach to control magnetic anisotropy in soft magnetic layer using temperature annealing is demonstrated. It makes these structures possible for new applications in nanoelectronics. Source


Samardak A.S.,Laboratory for Laser And Chemical Thin Film Technology | Sukovatitsina E.V.,Laboratory for Laser And Chemical Thin Film Technology | Ognev A.V.,Laboratory for Laser And Chemical Thin Film Technology | Anisimova M.V.,Laboratory for Laser And Chemical Thin Film Technology | And 2 more authors.
Journal of Physics: Conference Series | Year: 2011

We have studied the crystal structure, surface morphology, magnetic anisotropy, domain structure and tunnel magnetoresistance of spin-valves with a single and double MgO barrier layers. We have demonstrated the domain structure for soft and hard magnetic layers and observed significant changes after low temperature annealing. We have carried out magnetoresistance measurements using current-in-plane (CIP) four-probe technique and discovered a substantial difference in the values of TMR ratio for single and double MTJ spin-valves. It is shown that domain structure and magnetization reversal are the same for both systems, but otherwise the behavior of tunnel magnetoresistance is different, because of second MgO barrier effects on the system conductivity. The ability to manipulate the magnetization direction in MTJ systems using temperature annealing is demonstrated. It makes these structures possible for new applications in nanoelectronics as magnetic recording media and high sensitive sensors. © Published under licence by IOP Publishing Ltd. Source

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