Laboratory for Electro Optics Systems LEOS ISRO

Bangalore, India

Laboratory for Electro Optics Systems LEOS ISRO

Bangalore, India
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Kumar M.V.,University of Mysore | Verma S.,Semiconductor Laboratory SCL | Asokan K.,Inter University Accelerator Center | Shobha V.,Laboratory for Electro Optics Systems LEOS ISRO | And 2 more authors.
ECS Journal of Solid State Science and Technology | Year: 2016

The effect of 150 MeV Ag9+ ion irradiation on electrical characteristics of Si photo detectors has been analyzed through in-situ Current voltage (I-V) and Capacitance voltage (C-V) measurements. Ideality factor (n), series resistance (Rs) and reverse leakage current (IR) are extracted from I-V characteristics. The value of n for pristine detector is found to be 1.24 and it has increased gradually along with the fluence. The value of IR for pristine is found to be 4.97 × 10-8 A and it increases to about three orders of magnitude at the fluence of 1 × 1013 ions/cm2 and further there is no observable change. Also, C-V characteristics exhibit considerable degradation. The value of capacitance decreased from 1.13 ×10-8 F to 3.97 × 10-10 F and also carrier concentration (NA) undergoes slight decrease with the increase in fluence. The 150 MeV Ag9+ ion induced displacements, vacancies in the bulk region mainly attribute to the observed degradation in the electrical characteristics. The ionization and displacement damage profiles were estimated from SRIM/TRIM (Stopping power and Range of Ion in Matter/Transport and Range of Ion in Matter) simulation codes. The observed degradations are explained in terms of TID (total ionization dose) and Dd (displacement damage dose). © 2016 The Electrochemical Society All rights reserved.

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