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Coq Germanicus R.,Presto Engineering | Leclere P.,University of Mons | Guhel Y.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | Boudart B.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | And 4 more authors.
Journal of Applied Physics | Year: 2015

In this study, the evolution of the Scanning Spreading Resistance Microscopy (SSRM) signal, as a function of the doping level and of the bias voltage applied for consecutive scans, is carefully analyzed for an intimate high force contact between the tip and a silicon staircase test-structure. Within our experimental set-up, the SSRM technique, performed in ambient air, is used to collect the overall current flowing through the tip-sample Schottky nanocontact, taking into account the local spreading resistance contribution and the current flowing along the surface around the conductive tip. Whereas no significant bias voltage sign dependence is measured in n-type epitaxially doped silicon, a large increase of the overall resistance is demonstrated in lightly doped p-type silicon for a negatively biased sample. In this regime, the Schottky nanocontact blocks the spreading current, and a surface current of minority carriers can be observed. Moreover, micro-Raman analysis shows that the topside silicon layer, which remains after SSRM scanning is amorphous and therefore that SSRM scanning promotes silicon surface amorphization around the tip. Hence, the surface leakage current is suppressed, which impacts the total measured current, especially on lightly doped p-type silicon where it may play a significant role. By using Peak Force Tapping Quantitative Nano-Mechanical (PF-QNM) mode, the micro-structural, nano-mechanical properties are determined for n- and p-type epitaxially doped silicon, after successive SSRM scans. Finally, two-dimensional axisymmetric device simulations have been performed and confirm the impact of the minority carrier induced current on pristine samples. Thus, differential measurement between the first and the second SSRM scan allow the surface current to be probed. © 2015 AIP Publishing LLC.

Lakhdari Z.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | Adelaide L.,Laboratoire Central des Ponts et Chaussees LCPC
2009 European Control Conference, ECC 2009 | Year: 2015

In this work, the principal algebraic, arithmetic and geometric properties of the CkSpline functions are presented. In this way Ckspline functions can be defined as the interpolating functions of the set of the all Taylor-Maclaurin expansion up to degree k defined at each point of discretization of the considered studying function. The case study in this article concerns a loading characteristics of three phase Axial Flux Permanent Magnet Synchronous Machine (AFPMSM) with broad air-gap. It shows that this characteristic leads to algebraic differential equations (ADE), which we know recently, the properties and integrated numerical means. These equations are governed by a multidistributed value problem (MDVP) which makes this problem a difficult numerical one, non accessible by traditional solvers. This article shows thanks to the properties of Ck spline functions that we can integrated such problems by judicious choices of the initial vectors and simulated annealing methods. The first results of simulations will be given. Then traditional differential and integral calculus lead in the Ckspline functional spaces to new functional and invariant calculus. © 2009 EUCA.

Kassas A.,Lebanese University | Kassas A.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | Bernard J.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | Lelievre C.,Laboratoire University Des Science Appliquees Of Cherbourg Lusac | And 6 more authors.
Materials Research Bulletin | Year: 2013

The feasibility of humidity sensor, consisting of a thick layer of MgTiO3/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan "sclg"), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time. © 2013 Elsevier Ltd. All rights reserved.

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