Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe

France

Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe

France
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Calderini G.,Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe | Calderini G.,University of Pisa | Bagolini A.,Fondazione Bruno Kessler | Beccherle R.,National Institute of Nuclear Physics, Italy | And 9 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2016

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed. © 2016 Elsevier B.V.


Calderini G.,Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe | Calderini G.,University of Pisa | Bagolini A.,Fondazione Bruno Kessler | Bomben M.,Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe | And 7 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2014

In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK. © 2014 Elsevier B.V.


Calderini G.,Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe | Calderini G.,University of Pisa
EPJ Web of Conferences | Year: 2012

Recent results on the search for new physics at BaBar and Belle B-factories are presented. The search for a light Higgs boson produced in the decay of different γ resonances is shown. In addition, recent measurements aimed to discover invisible final states produced by new physics mechanisms beyond the standard model are presented. © Owned by the authors 2012.


Calderini G.,Laboratoire Of Physique Nucleaire Et Des Hautes Energies Lpnhe | Calderini G.,University of Pisa
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2014

This paper reports on recent accomplishments and ongoing work of the ATLAS Planar Pixel Sensors R&D project. Special attention is given in particular to new testbeam results obtained with highly irradiated sensors, developments in the field of slim and active edges and first step towards prototypes of future pixel modules. © 2014 Elsevier B.V.

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