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Khemiri N.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Kanzari M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | Year: 2010

CuIn3S5 and CuIn7S11 powders were prepared by solid-state reaction method using high-purity elemental copper, indium and sulphur. The films prepared from CuIn3S5 and CuIn7S11 powders were grown by thermal evaporation under vacuum (10-6 Torr) on glass substrates at different substrate temperature Ts varying from room temperature to 200 °C. The powders and thin films were characterized for their structural properties by using X-ray diffraction (XRD) and energy dispersive X-ray (EDX). Both powders were polycrystalline with chalcopyrite and spinel structure, respectively. From the XRD data, we calculated the lattice parameters of the structure for the compounds. For CuIn3S5 powder, we also calculated the cation-anion bond lengths. The effect of substrate temperature Ts on the structural properties of the films, such as crystal phase, preferred orientation and crystallinity was investigated. Indeed, X-ray diffraction analysis revealed that the films deposited at a room temperature (30 °C) are amorphous in nature while those deposited on heated were polycrystalline with a preferred orientation along (1 1 2) of the chalcopyrite phase and (3 1 1) of the spinel phase for CuIn3S5 and CuIn7S11 films prepared from powders, respectively. The morphology of the films was determined by atomic force microscopy AFM. The surface roughness and the grain size of the films increase on increasing the substrate temperature. © 2009 Elsevier B.V. All rights reserved. Source


Aousgi F.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Kanzari M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs
Journal of Optoelectronics and Advanced Materials | Year: 2010

Sb2S3 thin films have been deposited by single source vacuum thermal evaporation onto glass substrates at various substrate temperatures in the range 30- 240 °C. The X-ray diffraction spectra indicated that all the as-deposited Sb2S3 films were amorphous.The optical constants were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300-1800 nm. It has been found that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated according to the model of Spitzer and Fan. Source


Smaili F.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Kanzari M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs
Physical and Chemical News | Year: 2010

CuIn1-xGaxS2 thin films with varied Ga content (0 ≤ x ≤1) were prepared by vacuum thermal evaporation in presence of thermal gradient by using simultaneously the CuInS2 and CuGaS2 powders. The CuIn1-xGaxS2 thin films were deposited onto conventional soda lime glass substrates heated at 200 °C during the deposition process. A series of CuIn1-xGaxS2 thin films were obtained by increasing the mCGS/(mCGS+mCIS) mass ratio in the evaporating materials. Structural, morphological and optical properties of the films were studied relating of the Ga content. The (112) peak corresponding to the chalcopyrite structure has been observed to be the dominating peak in all the films. However the (112) peak intensity decreases by increasing the Ga content. From EDX analysis, the Cu:(In+Ga):S atomic ratio in all thin films was approximately 1:1:2. The Ga/(In+Ga) atomic ratio in the thin films changed linearly from 0 to 1.0 by increasing the mCGS/(mCGS+mCIS) mass ratio in the evaporating materials. Low transmission values were found indicating the presenceof an opaque aspect due to the presence of a metallic phase in front of the glass substrates. Source


Fadhli Y.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Rabhi A.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Kanzari M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs
Journal of Materials Science: Materials in Electronics | Year: 2014

In this study, the annealing time and substrates nature effects on the physical properties of CuSbS2 thin films were investigated. CuSbS2 thin films were prepared on various substrates via thermal evaporation technique. The as_deposited films were annealed in air for 60 and 120 min at 250 °C. The atomic force microscope micrographs of as_made and annealed thin films show that the surface morphology is affected by annealing time and substrate variation. X_ray diffraction results show that crystallinity increased with annealing time. The microstructure parameters: crystallite size and dislocation density were calculated. The optical properties were obtained from the analysis of the experimental recorded transmittance and reflectance spectral data over the wavelength range 300–1800 nm. High absorption coefficients (105–106 cm−1) are reached. Values of Eg are close to the theoretical optimum for efficient conversion of solar radiation into electrical power making the material suitable for photovoltaic applications. © 2014, Springer Science+Business Media New York. Source


Ghrairi N.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Aousgi F.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Zribi M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs | Kanzari M.,Laboratoire Of Photovoltaique Et Materiaux Semi Conducteurs
Chalcogenide Letters | Year: 2010

In the present paper, we report the growth of antimony sulphide (Sb2S3) thin films by thermal evaporation method and detailed characterization of these films. The films were deposited from a Sb2S3 powder at unheated substrates. We have analysed the structural, optical morphological and electrical properties of as deposited Sb2S3 films as well as those subjected to annealing in nitrogen atmosphere in the temperature range 100-300°C. As-deposited films are amorphous to X-ray diffraction (XRD). Polycrystalline antimony sulphide films are obtained and enhanced from the annealing temperature above 200°C. Both amorphous and polycrystalline antimony sulphide films have strong absorption coefficients in the range 104 -5×105 cm-1, and have direct band gaps with band energies 2-2.2 eV for the films annealed below 200°C and 1.7-1.8 eV for the films annealed at temperatures higher than 200°C. Inside, the thermal activation energy decreased with increasing annealed temperature for thins films treated in nitrogen atmosphere. Source

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