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Capelle M.,Laboratoire Of Microelectronique Of Puissance | Capelle M.,STMicroelectronics | Billoue J.,Laboratoire Of Microelectronique Of Puissance | Poveda P.,STMicroelectronics | Gautier G.,Laboratoire Of Microelectronique Of Puissance
IEEE Transactions on Electron Devices | Year: 2011

To study the effect of various n-type substrates on high-frequency inductor performances, several devices were integrated on porous silicon (PS), silicon (Si), and glass. Both n-type mesoporous Si and mesoporous/macroporous Si bilayers were fabricated. The analysis further shows that PS reduces significantly the substrate losses. Indeed, higher quality factors have been obtained for the inductors integrated on PS than on the Si substrate and particularly in the case of bilayer structures. These original results can be added to p-type PS performances already shown in the literature. Then, this work demonstrates that PS can also be a promising candidate for the integration of passive and active devices on n-type silicon. © 2011 IEEE. Source


Kouassi S.,Laboratoire Of Microelectronique Of Puissance | Gautier G.,Laboratoire Of Microelectronique Of Puissance | Desplobain S.,Laboratoire Of Microelectronique Of Puissance | Coudron L.,Laboratoire Of Microelectronique Of Puissance | Ventura L.,Laboratoire Of Microelectronique Of Puissance
Defect and Diffusion Forum | Year: 2010

MEMS technology requires low cost techniques to permit large scale fabrication for production. Porous silicon (PS) can be used in different manner to replace standard expensive etching techniques like DRIE (Deep Reactive Ion Etching). To perform same process quality as the latter, one need to understand how different parameters can influence porous silicon properties. We investigate here local formation of macroporous silicon on 2D and 3D silicon substrates. The blank substrate is a low doped (26-33 Ω cm) n type 6 inches silicon wafer. Then, an in situ phosphorus-doped polycrystalline silicon (N+ Poly-Si) is deposited on a thermal oxide layer to delimit the regions to be etched. Porous silicon is obtained afterwards using electrochemical anodization in a hydrofluoric acid (HF) solution. The effect of the temperature process on Si-HF electrochemical system voltamperometric curves, macropores morphology and electrochemical etch rates is more specifically studied. Moreover, permeation of porous substrates to hydrogen is studied after various anodization post-treatments such as KOH and HF wet etching or after a thin gold layer deposition used as current collector in micro fuel cells. © (2010) Trans Tech Publications. Source

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