Laboratoire des Technologies Avancees du Genie Electrique

Chelghoum el Aïd, Algeria

Laboratoire des Technologies Avancees du Genie Electrique

Chelghoum el Aïd, Algeria
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Kachenoura R.,Mouloud Mammeri University | Kachenoura R.,Laboratoire des Technologies Avancees du Genie Electrique | Lounas F.,Mouloud Mammeri University | Lounas F.,Laboratoire des Technologies Avancees du Genie Electrique | And 5 more authors.
International Review on Modelling and Simulations | Year: 2014

In this paper we present an accurate analytical model to calculate the losses in an insulate gate bipolar transistor (IGBT) with free-wheeling diode. The nonlinearity of capacitances of the devices and the parasitic inductance in the power circuit are considered. This mathematical model estimates the total power losses in a simple way with a clear physical meaning, high accuracy and without a significant reduction in the speed of numerical calculations. The datasheet results are provided to verify the model; the simulation results are in good agreement with those given by the manufacturer's data sheets. © 2014 Praise Worthy Prize S.r.l.-All rights reserved.

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