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Valentin A.,Laboratoire des science des Procedes et des Materiaux 3407 University Paris 13Sorbonne Paris Cite | Tardieu A.,Laboratoire des science des Procedes et des Materiaux 3407 University Paris 13Sorbonne Paris Cite | Mille V.,Laboratoire des science des Procedes et des Materiaux 3407 University Paris 13Sorbonne Paris Cite | Tallaire A.,Laboratoire des science des Procedes et des Materiaux 3407 University Paris 13Sorbonne Paris Cite | And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

Time-of-flight experiments have been performed on a freestanding CVD diamond sample with Ti-Au contacts. Electron-hole pairs are generated with alpha rays from an 241Am source. A low-field mobility of 2972cm2/Vs and a saturation velocity of 12.3×106cm/s have been extracted from the hole current pulses. However, the obtained electrons pulse shapes do not allow a clear determination of the mobility. The electrons appear to be slowed down by space-charges located near the contacts. This clear polarization effect is attributed to negative charges trapped at the metal/diamond interface. Its influence has been investigated by comparing the current pulses obtained when applying a negative or positive bias. This bias influences the electric field inside the sample. Two competitive effects can be identified: a bulk effect and a contact effect. Time-of-flight can thus be used to identify the presence of defects in diamond crystals for electronic applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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