Blevin T.,French National Solar Energy Institute |
Blevin T.,Laboratoire Central Cite Scientifique Avenue Poincare CS |
Lanterne A.,French National Solar Energy Institute |
Grange B.,French National Solar Energy Institute |
And 3 more authors.
Solar Energy Materials and Solar Cells | Year: 2014
In this work, two process simplifications for n-type PERT (passivated emitter rear totally diffused) bifacial solar cells are investigated. Both are based on a single thermal treatment for elaborating boron and phosphorus doped regions aiming at reducing the number of high temperature steps of standard process. The first simplification shows a mixed co-diffusion from a gaseous source of phosphorus and a boron doped dielectric layer elaborated by low frequency plasma enhanced chemical vapor deposition (PECVD). The second exhibits two independent ion implantations, followed by a co-anneal/activation step. In both cases, implied open-circuit voltages are similar to standard process (~660-670mV) and emitters allow good contacting by screen-printing (ρ c =3.0-5.0mΩcm2). PERT cells resulting from these processes show very promising performances with efficiency up to 19.7% on industrial 156×156mm2 pseudo square Cz wafers. © 2014 Elsevier B.V.