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Capelle, France

Larousse S.,Lyon Institute of Nanotechnologies | Razik H.,Laboratoire Ampere | Cellier R.,Lyon Institute of Nanotechnologies | Lombard P.,Lyon Institute of Nanotechnologies | Volay P.,Centralp
9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia | Year: 2015

This article presents a modified control strategy for a large input voltage range in an active-clamp soft switching converter. This control strategy is based on frequency modulation and allows a soft switching of all semiconductor devices on a large input voltage range. This frequency modulation also minimizes transformer loss without losing soft switching both on primary and secondary side of the converter. The proposed control strategy was implemented on a 30W prototype with a switching frequency up to 215kHz. The prototype is soft switching on an input voltage range between 15V and 75V, confirming the benefits of the presented control strategy with efficiency above 90% on a 28-63V range. © 2015 Korean Institute of Power Electronics. Source


Berthou M.,CSIC - National Center of Microelectronics | Godignon P.,CSIC - National Center of Microelectronics | Montserrat J.,CSIC - National Center of Microelectronics | Millan J.,CSIC - National Center of Microelectronics | Planson D.,Laboratoire Ampere
Journal of Electronic Materials | Year: 2011

Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with different geometries, and their forward characteristics were measured up to 300°C. The 1.7-kV diodes exhibited unipolar conduction up to 6 V at 275°C, whereas 6-kV diodes showed ideal on-resistance, R on. An optimized JBS design permits a higher breakdown voltage to be obtained than for the pure Schottky diode, with a reasonable increase (10%) of the on-resistance. Results demonstrate the feasibility of tungsten JBS diodes for fast-switching, high-voltage, and high-temperature applications. © 2011 TMS. Source


Gaignaire R.,University of Liege | Scorretti R.,Laboratoire Ampere | Sabariego R.V.,University of Liege | Geuzaine C.,University of Liege
IEEE Transactions on Magnetics | Year: 2012

The finite element method can be used to compute the electromagnetic fields induced in the human body by environmental extremely low frequency (ELF) fields. However, the electric properties of tissues are not precisely known and may vary depending on the individual, his/her age and other physiological parameters. In this paper, we account for the uncertainties on the conductivities of the brain tissues and spread them out to the induced fields by means of a nonintrusive approach based on Hermite polynomial chaos, with the finite element method as a black box. After showing the convergence of the method, we compute the probability to be over the thresholds defined by the international guidelines for limiting exposure to electromagnetic fields published by ICNIRP. © 2012 IEEE. Source


Dubois F.,INSA Lyon | Dubois F.,Laboratoire Ampere | Dubois F.,Safran Group | Morel H.,Safran Group | And 3 more authors.
Proceedings - IMAPS International Conference and Exhibition on High Temperature Electronics, HiTEC 2012 | Year: 2012

This paper presents a qualitative description of the punch-through mechanism in Silicon Carbide (SiC) JFET from Infineon/SiC ED. A detailed one-dimensional analytical expression is derived for the current-voltage characteristic of the punch-through effect in the SiC JFET. The proposed model based on physical parameters is validated with experimental results for low current level. Source


Asllani B.,Laboratoire Ampere | Berthou M.,Laboratoire Ampere | Tournier D.,Laboratoire Ampere | Brosselard P.,Caly Technologies | Godignon P.,CSIC - National Center of Microelectronics
Materials Science Forum | Year: 2016

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage. © 2016 Trans Tech Publications, Switzerland. Source

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