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Kitakyushu, Japan

Kyushu Institute of Technology is one of the 87 national universities in Japan. Located in Fukuoka Prefecture on the island of Kyushu, it is dedicated to education and research in the fields of science and technology. It is often abbreviated to KIT and sometimes to Kyutech.The founder was Matsumoto Kenjiro, second son of Yasukawa Keiichiro, and the links with the Yaskawa Electric Corporation remain strong to this day. The centenary of the opening of the Tobata campus is being celebrated in 2009, with Founder's Day on May 28, 2009.The most famous alumnus is "Mr. Tornado", the severe storms researcher Tetsuya "Ted" Fujita. He graduated in 1943 and was an associate professor until 1953 when he was invited to the University of Chicago. Wikipedia.


Patent
Lintec Corporation and Kyushu Institute of Technology | Date: 2014-02-18

The invention provides a thermoelectric conversion material having a low thermal conductivity and an improved figure of merit and a production method for the material, and also provides a thermoelectric conversion module. The thermoelectric conversion material has, on a porous substrate having microscopic pores, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the porous substrate has a polymer layer (B) on a plastic film (A) and the microscopic pores are formed in the polymer layer (B) and in a part of the plastic film (A). The production method for the thermoelectric conversion material comprises a substrate formation step of forming a porous substrate including a step 1, a step 2 and a step 3, and comprises a film formation step of forming a thermoelectric semiconductor layer through film formation of a thermoelectric semiconductor material on the porous substrate. The thermoelectric conversion module uses the thermoelectric conversion material.


Patent
Ebara Corporation and Kyushu Institute of Technology | Date: 2015-03-11

A polishing apparatus having a polishing pad surface property measuring device that is capable of measuring surface properties of a polishing pad in a state where a liquid film exists on the polishing pad is disclosed. The polishing apparatus includes a dam configured to dam a liquid on the polishing pad to form a liquid film having a thickness equal to or greater than a prescribed value in at least part of an area on the polishing pad, a light emitter having a light emission end disposed in the liquid film formed by the dam and configured to emit a laser beam onto the polishing pad, a light receiver disposed in the liquid film formed by the dam and configured to receive light scattered by and bounced off the polishing pad at a plurality of angles due to surface properties of the polishing pad after the laser beam is emitted from the light emitter, and a processor configured to perform Fourier transform on the light received by the light receiver into a predetermined wavelength corresponding to a reflection intensity distribution and to determine a feature quantity of the surface properties of the pad.


Patent
MegaChips Corporation and Kyushu Institute of Technology | Date: 2015-10-13

The purpose of the present invention is to provide a state estimation apparatus that appropriately estimates the internal state of an observation target by determining likelihoods from a plurality of observations. An observation obtaining unit of the state estimation system obtains, at given time intervals, a plurality of observation data obtained from an observable event. The observation selecting unit selects a piece of observation data from the plurality of pieces of observation data obtained by the observation obtaining unit based on a posterior probability distribution data obtained at a preceding time t1. The likelihood obtaining unit obtains likelihood data based on the observation data selected by the observation selecting unit and predicted probability distribution data obtained through prediction processing using the posterior probability distribution data. The posterior probability distribution estimation unit estimates posterior probability distribution data representing a state of the observable event based on the predicted probability distribution data obtained by the likelihood obtaining unit and the likelihood data. The prior probability distribution output unit outputs prior probability distribution data based on the posterior probability distribution data estimated by the posterior probability distribution estimation unit as prior probability distribution data at a next time t+1.


Patent
Kabushiki Kaisha Yaskawa Denki and Kyushu Institute of Technology | Date: 2014-02-19

In an object detecting method according to an embodiment, external reference points are set in external space of a model of an object and an internal reference point is set in internal space of the model. A table is stored in which feature quantities on a local surface of the model are associated with positions of the external reference points and the internal reference point. The feature quantity on the local surface of the model is calculated, and the position of the reference point whose feature quantity is identical to the calculated feature quantity is acquired from the table and is converted into a position in a real space. When the converted position is outside the object, the position is excluded from information for estimation and the position and the attitude of the object are estimated.


A high-voltage insulated gate type power semiconductor device includes a low-concentration first conductivity type base layer; a plurality of trenches selectively formed with large intervals and narrow intervals provided alternately, in a front surface of the low-concentration first conductivity type base layer; a gate insulating film formed on a surface of each of the plurality of trenches; a gate electrode formed inside the gate insulating film; and a second conductivity type base layer selectively formed between the adjacent trenches sharing the narrow interval. The high-voltage insulated gate type power semiconductor device includes a high-concentration first conductivity type source layer selectively formed on a front surface of the second conductivity type base layer.

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