Kyoto Institute of Technology in Kyoto, Japan is a Japanese national university established in 1949. The history of the Institute extends back to two schools, Kyoto Craft High School and Kyoto Sericulture Training School , which were forerunners of the Faculty of Engineering and Design and the Faculty of Textile Science, respectively. The former was moved to Sakyo-ku, Matsugasaki in 1930 and changed its name to Kyoto Industrial High School in 1944. The latter developed into Kyoto Sericulture High School, under direct supervision of the Ministry of Education in 1914, and changed its name to Kyoto Sericulture Technical High School in 1931 and further to Kyoto Technical High School of Sericulture in 1944. The two forerunners merged in 1949, due to educational system revisions, to establish the present School of Science and Technology. Together with Shinshu University and Tokyo University of Agriculture and Technology, the Institute is one of Japan's three historical centers of textile research.Kyoto Institute of Technology has a campus at Matsugasaki in Sakyō-ku. Another campus is at Saga in Ukyō-ku. Its Japanese nickname is Kōsen . In English it is known as KIT.Beginning in October 2007, graduate course instruction became available in English through the International Program for Science and Technology for specially selected students from the 50 institutions worldwide with KIT Exchange Agreements. Wikipedia.
Kyoto Institute of Technology and Enplas Corporation | Date: 2013-11-22
Provided is a peptide containing a variable region and improved in production efficiency. The peptide contains a variable region to which an antigen-binding site is to be formed and has an amino acid sequence expressing a specific adsorption function to a solid phase at a site closer to the C-terminal than a heavy-chain variable region or at a site closer to the C-terminal than a light-chain variable region.
Kyoto Institute of Technology | Date: 2013-12-06
There is provided a new light-absorbing material and a photoelectric conversion element using the same, which are capable of improving conversion efficiency of a solar cell. The light-absorbing material in the present invention is made up of a GaN-based compound semiconductor with part of Ga replaced by a 3d transition metal, and has one or more impurity bands, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 nm is not lower than 1000 cm
Sakai Chemical Industry Co. and Kyoto Institute of Technology | Date: 2015-08-12
A photocatalyst material and a photocatalyst device capable of generating hydrogen from water by radiation of sunlight at high efficiency. The photocatalyst material according to the present invention includes a nitride-based compound semiconductor obtained by replacement of part of Ga and/or Al by a 3d-transition metal. The nitride-based compound semiconductor has one or more impurity bands. A light absorption coefficient of the nitride-based compound semiconductor is 1,000 cm
Kyoto Institute of Technology | Date: 2014-02-03
A method for refolding an antibody, a process for producing a refolded antibody, a refolded antibody, and uses thereof are provided. A method for refolding an antibody in a liquid phase comprises the steps of denaturing an inactive antibody binding directly or through a linker to a peptide, the peptide having an isoelectric point lower than the isoelectric point of the inactive antibody, and dispersing in a liquid phase the peptide-binding inactive antibody denatured in the step above. Also provided is a process for producing a refolded antibody.
Kyoto Institute of Technology | Date: 2013-08-06
The present invention provides a fast-response photorefractive polymer element (