Raleigh, NC, United States
Raleigh, NC, United States

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Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase II | Award Amount: 517.62K | Year: 2015

Gallium Nitride is a wide bandgap, highly transparent material with a second order non-linear susceptibility similar to that of LiNbO3 with high thermal conductivity. As such, it is of interest for use as a quasi-phase matching material for several high power nonlinear devices. Kyma Technologies will grow thick (~1mm) periodically oriented GaN crystals using hydride vapor phase epitaxy (HVPE) and ascertain their applicability for use in various infrared nonlinear devices.


Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 80.00K | Year: 2015

Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly into a GaN FET epi process.


Grant
Agency: Department of Defense | Branch: Navy | Program: STTR | Phase: Phase I | Award Amount: 80.00K | Year: 2015

Kyma will develop and model a modular high rep rate (>100kHz) photoconductive switch using GaN and commercial-off-the-shelf laser diodes. The switch will be designed to switch >1.5kV at >150A in 5-10ns.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: STTR | Phase: Phase II | Award Amount: 1000.00K | Year: 2012

The overall objective of this program is to improve the producibility of HVPE GaN through the use of in-situ monitoring during the growth process. Various in-situ monitoring devices will be used: a UV absorption technique to monitor the GaCl concentration above the growing GaN wafer; a commercial BandiT system capable of measuring optical emission from the growing wafer in order to measure the substrate temperature; a commericial MOSS system to measure wafer bow during growth; an acoustic emission monitor to understand wafer cracking; and a differentially pumped mass spectrometer to measure the concentrations of various species in the exhaust of the reactor. In conjunction with thermal, gas flow, and chemical reaction simulation, these in-situ monitoring devices will allow for better control of key growth variables, which in turn will lead to the development of a robust, producible growth processes. The aim of these in-situ monitor defined growth processes is to give maximum process latitude in the development of optimized and reproducible growth parameters, specifically tuned to improve yield in large area wafers and thicker boules, whose quality will be verified by demonstrating high quality homoepitaxy, as evidenced by high mobility and high sheet density 2DEGs with the University partner.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 1.00M | Year: 2014

The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defect densities give rise to degraded performance and reliability, while the wafer bow can be problematic to device fabrication as well as to growth of e.g. InGaN at lower temperatures than underlying buffer layer temperatures, reducing device yields. The technology proposed utilizes HVPE films grown on both sides of the wafer, which results in a bow-free, thick GaN template which is scalable to large diameter substrates. Templates are polished to an epi-ready finish, which is only possible when the wafers are flat in the first place. We have demonstrated the FLAAT concept using 2 and 4 sapphire for GaN thicknesses up to 50 microns. Initial LED results yielded lower wavelength distribution across a wafer than a control layer directly on sapphire. Phase II of this program will improve the structural, optical, and electrical properties of the templates as well as demonstrate the concept at 6. We will additionally demonstrate the concept using AlN films instead of GaN films. Commercial Applications and Other Benefits: The technology can provide the quality of freestanding GaN at the cost of a GaN template so many types of devices can be impacted by the availability of the FLAAT templates. The large area sapphire market would grow if the technology takes off.


Grant
Agency: Department of Defense | Branch: Navy | Program: STTR | Phase: Phase I | Award Amount: 79.99K | Year: 2016

High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to Si), which suggests this material is well-suited for power device applications. Kyma Technologies proposes to design a deposition system capable of growing monoclinic beta-polytype Ga2O3, and n-type and p-type layers. The deposition rates will be > 4 um/hr; this lends itself to halide vapor phase epitaxy (HVPE), and has already been successfully accomplished elsewhere. This work will build on Kymas extensive experience designing, building and deploying HVPE for GaN and AlN.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 1.00M | Year: 2016

The use of non-native substrates for GaN-based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defect densities give rise to degraded performance and reliability, while the wafer bow can be problematic to device fabrication as well as to growth of e.g. InGaN at lower temperatures than underlying buffer layer temperatures, reducing device yields. 6. General statement of how this problem is being addressed: The technology proposed utilizes HVPE films grown on an engineered substrate. 7. What was done in Phase I and Phase II? We have demonstrated the FLAAT concept using 2”, 4”, and 6” substrates and have demonstrated the engineered substrate under Phase II. LED device results on groups of 6” wafers showed >90% yields in a production setting. We have also designed various components which will be utilized on the production HPVE tool to improve throughput, uptime, diameter scalability, and reduce cost. 8. What is planned for the Phase II project? The Phase IIB project asks to build the prototype production tool. 9. Commercial Applications and Other Benefits: The technology can provide the quality of freestanding GaN at the cost of a GaN template so many types of devices can be impacted by the availability of the FLAAT templates. We have funding and purchasing commitments from two major LED manufacturers and envision the technology being adopted by power electronics manufacturers as well.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 150.00K | Year: 2015

Crystalline aluminum nitride AlN) materials have the potential to support a new generation of ultra-high performance power electronics. While great progress has been realized in producing high structural quality AlN substrates, there is currently no viable method for controllably producing electrically conductive AlN device layers on top of such substrates. R&D groups are attempting to develop metalorganic chemical vapor deposition MOCVD) and other laboratory scale processes for controlling the electrical conductivity of AlN, yet those approaches are too expensive and dont support high purity AlN growth which then prevents the ability to gain control over electrical conductivity. Kyma will apply their high growth rate, high purity hydride vapor phase epitaxy HVPE) technology along with proprietary doping approaches to develop a manufacturable process for producing electrically conductive AlN device layers on top of high structural quality AlN substrates provided by Kymas partner HexaTech. Advanced transport characterization studies will be carried out by David Look of Wright State University to document the achieved levels of electrical conductivity and related parameters of importance including electron concentration and mobility. High performance AlN power electronics will compete with other wide bandgap semiconductors in the market for discrete power electronic components and are expected to take over 20% of the overall market which is expected to reach $15B by 2020. Key benefits include major energy savings as well as new high paying jobs in four major industry sectors: buildings and industrial, electronics and IT, renewables and grid storage, and transportation.


Patent
Kyma Technologies, Inc. | Date: 2015-06-15

Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.


Grant
Agency: Department of Defense | Branch: Army | Program: STTR | Phase: Phase I | Award Amount: 150.00K | Year: 2014

Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of MoS2-based RF FETs. Utilizing a novel and optimized source/drain contact approach, the targeted performance of these FETs is to achieve ft and fmax>5 GHz, while handling a DC power>10µW and an RF power output>1.0µW.

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