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Raleigh, NC, United States

Grant
Agency: Department of Defense | Branch: Navy | Program: STTR | Phase: Phase I | Award Amount: 80.00K | Year: 2015

Kyma will develop and model a modular high rep rate (>100kHz) photoconductive switch using GaN and commercial-off-the-shelf laser diodes. The switch will be designed to switch >1.5kV at >150A in 5-10ns.


Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 1.00M | Year: 2014

The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defect densities give rise to degraded performance and reliability, while the wafer bow can be problematic to device fabrication as well as to growth of e.g. InGaN at lower temperatures than underlying buffer layer temperatures, reducing device yields. The technology proposed utilizes HVPE films grown on both sides of the wafer, which results in a bow-free, thick GaN template which is scalable to large diameter substrates. Templates are polished to an epi-ready finish, which is only possible when the wafers are flat in the first place. We have demonstrated the FLAAT concept using 2 and 4 sapphire for GaN thicknesses up to 50 microns. Initial LED results yielded lower wavelength distribution across a wafer than a control layer directly on sapphire. Phase II of this program will improve the structural, optical, and electrical properties of the templates as well as demonstrate the concept at 6. We will additionally demonstrate the concept using AlN films instead of GaN films. Commercial Applications and Other Benefits: The technology can provide the quality of freestanding GaN at the cost of a GaN template so many types of devices can be impacted by the availability of the FLAAT templates. The large area sapphire market would grow if the technology takes off.


Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 80.00K | Year: 2015

Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly into a GaN FET epi process.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 150.00K | Year: 2015

Crystalline aluminum nitride AlN) materials have the potential to support a new generation of ultra-high performance power electronics. While great progress has been realized in producing high structural quality AlN substrates, there is currently no viable method for controllably producing electrically conductive AlN device layers on top of such substrates. R&D groups are attempting to develop metalorganic chemical vapor deposition MOCVD) and other laboratory scale processes for controlling the electrical conductivity of AlN, yet those approaches are too expensive and dont support high purity AlN growth which then prevents the ability to gain control over electrical conductivity. Kyma will apply their high growth rate, high purity hydride vapor phase epitaxy HVPE) technology along with proprietary doping approaches to develop a manufacturable process for producing electrically conductive AlN device layers on top of high structural quality AlN substrates provided by Kymas partner HexaTech. Advanced transport characterization studies will be carried out by David Look of Wright State University to document the achieved levels of electrical conductivity and related parameters of importance including electron concentration and mobility. High performance AlN power electronics will compete with other wide bandgap semiconductors in the market for discrete power electronic components and are expected to take over 20% of the overall market which is expected to reach $15B by 2020. Key benefits include major energy savings as well as new high paying jobs in four major industry sectors: buildings and industrial, electronics and IT, renewables and grid storage, and transportation.

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