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Chae J.,U.S. National Institute of Standards and Technology | Ha J.,Seoul National University | Ha J.,U.S. National Institute of Standards and Technology | Baek H.,Seoul National University | And 7 more authors.
Microelectronic Engineering | Year: 2011

Despite recent progress in understanding geometric structure, electronic structure, and transport properties in a graphene device (GD), role of point defects, edges, traps in a GD or a gate insulator has been poorly defined. We have studied electronic and geometric structures of these defects using scanning probe microscopy and try to link those with the transport properties of the GD. We perform scanning gate microscopy study to understand the local carrier scattering. It was found that geometric corrugations, defects and edges directly influence the local transport current. This observation is linked directly with a proposed scattering model based on macroscopic transport measurements. We suggest that dangling bonds in insulator-material SiO2 mainly used in GDs produce charge puddles and they work as scattering centers. © 2011 Elsevier B.V. All rights reserved.


Chae J.,Seoul National University | Yang H.J.,Seoul National University | Baek H.,Seoul National University | Ha J.,Seoul National University | And 7 more authors.
International Journal of High Speed Electronics and Systems | Year: 2011

Despite the recent progress in understanding the geometric structures of defects and edges in a graphene device (GD), how such defects and edges affect the transport properties of the device have not been clearly defined. In this study, the surface geometric structure of a GD was observed with an atomic force microscope (AFM) and the spatial variation of the transport current by the gating tip was measured with scanning gate microscopy (SGM). It was found that geometric corrugations, defects and edges directly influence the transport current. This observation is linked directly with a proposed scattering model based on macroscopic transport measurements. © 2011 World Scientific Publishing Company.

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