La Chaux-de-Fonds, Switzerland
La Chaux-de-Fonds, Switzerland

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Yusoff A.R.B.M.,Federal University of Paraná | Da Sillva W.J.,Federal Technological University of Paraná | Song Y.,Phase IV Engineering, Inc. | Holz E.,Komax Systems LCF SA | And 2 more authors.
Electronics Letters | Year: 2012

A report is presented on a study of single emitter layer metal base transistors with a base terminal made of aluminium grids. The latter exhibits low operating voltage associated to the high resistivity of the collector terminal and also shows very low leakage current. With such a single emitter layer, common-emitter current gain, on/off current ratio, and cutoff frequency of, respectively, 239.62, 3.8×10 7, and 1.4MHz, were obtained. © 2012 The Institution of Engineering and Technology.


Bin Mohd Yusoff A.R.,Kyung Hee University | Da Silva W.J.,Federal Technological University of Paraná | Song Y.,Komax Systems | Holz E.,Komax Systems LCF SA | And 2 more authors.
IEEE Transactions on Nanotechnology | Year: 2012

We report the realization of 140nm emitter TPD/CuPc (N,N′-diphenyl-N, N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine/copper phthalocyanine) with cutoff frequency f T = 300kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation. © 2002-2012 IEEE.


Bin Mohd Yusoff A.R.,Federal University of Paraná | Da Silva W.J.,Federal Technological University of Paraná | Song Y.,Komax Systems Malaysia | Holz E.,Komax Systems LCF SA | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2012

This paper reports the radio frequency (RF) and direct current performance of organic metal-base transistors using double emitter hole injection layers. We report on transistors exhibiting a cutoff frequency (f T) of 430 kHz at room temperature. Besides the cutoff frequency, other important key parameters for RF transistors are current gain and on /off current ratio, which are 293.46 and 50.5, respectively. © 2006 IEEE.


Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Yusoff A.R.B.M.,Federal University of Paraná | Song Y.,Komax Systems Malaysia | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Electron Devices | Year: 2012

We present nonmagnetic organic transistors with wideband-gap polymer:bis[(4,6-difluorophenyl)pyridinato-N, C 2]-(picolinato) iridium(III) (P36HCTPSi:FIrpic) mixed heterojunctions, achieving a high stable current gain of 73 and 14% organic magnetocurrent effect over a wide range of collector-emitter voltages and an external magnetic field, respectively. We employed a substrate heating treatment technique during deposition of the mixed emitter layer to achieve low surface roughness and, consequently, improved the on-to-off current ratio of around 10 5. © 2006 IEEE.


Yusoff A.R.B.M.,Federal University of Paraná | Song Y.,Komax Systems Malaysia | Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Electron Devices | Year: 2011

We have studied the effects of the fullerene C 70 on the device performance of a composite-emitter multilayer metal-base transistor (MBT). It is shown that the higher molecular weight leads to high common-emitter current gain β of over 252 in a wide range of collector-emitter voltage. By selecting an appropriate maximum and minimum base current I B, an on-to-off current ratio 4.73 × 10 6 is achieved. This is a substantial improvement over an identical MBT employing C 60 having β = 8 and on-to-off current ratio 4.25. © 2011 IEEE.


Yusoff A.R.B.M.,Federal University of Paraná | Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Song Y.,Komax Systems Malaysia | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Electron Devices | Year: 2011

This work examines the response of current gain, on-to-off current ratio, and organic magnetocurrent effect (OME) to variations of temperatures and applied magnetic field (MF) for large-band-gap double-emitter nonmagnetic organic transistors (NOTs). The NOTs showed exceptionally high on-to-off ratio up to 10 6. The current gain and OME were 736, and 8%, respectively. With the presence of magnetic field, these features behaved accordingly and explained. © 2011 IEEE.


Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Yusoff A.R.B.M.,Federal University of Paraná | Song Y.,Komax Systems Malaysia | Shuib S.A.,Komax Systems Malaysia
IEEE Electron Device Letters | Year: 2011

In this letter, we propose an organic transistor using a C 70 sandwich emitter to reduce the leakage current. An off -state leakage current that is smaller than 10 -10 (minimum of 1 ×10 -11A can be achieved (from V CE = 0-5 V and I B=0. The substantially reduced leakage current results in an excellent on-to-off current ratio that is up to 1.8 ×10 6. A small magnetocurrent effect of about 15% is obtained with an optimum emitter thickness. © 2011 IEEE.


Yusoff A.R.B.M.,Federal University of Paraná | Song Y.,Komax Systems Malaysia | Holz E.,Komax Systems LCF SA | Schulz D.,Komax Systems LCF SA | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Nanotechnology | Year: 2012

In this paper, we examined the influence of magnetic field with different substrate temperatures during the deposition of the Ir(ppy) 3:Ir(mpp) 3 blend layer heterojunction organic nonmagnetic organic transistor. It is shown that substrate heating treatment during evaporation leads to a significant improvement in the nonmagnetic metal-base transistor performance mainly due to an increase in current gain and ON-to-OFF current ratio. This is attributed to the improvement of thermal energy. Upon heating the substrate to 110°C in the presence of magnetic field, current gain and ON-to-OFF current ratio of 281 and 3.30 × 10 6 were obtained compared to 219 and 2.06 × 10 6 for an identical device prepared at 26°C, respectively. Magnetocurrent effect of ∼28% was obtained with applied 2T and 110°C. © 2011 IEEE.


Bin Mohd. Yusoff A.R.,Federal University of Paraná | Song Y.,Komax Systems Malaysia | Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Nanotechnology | Year: 2012

This investigation proposes an Ir(ppy) 3/Ir(mpp) 3 double-emitter heterojuction metal-base transistors grown by vacuum sublimation deposition. The improved structure exhibits the advantages of high ON-to-OFF current ratio 4.98 × 10 6 and high current gains (β) 355.6. The device survived for almost two months with a slight dropped in these parameters before it is completely gone in four months. Furthermore, this study elucidates the relation between leakage current, current gains, and ON-to-OFF current ratio. © 2011 IEEE.


Da Silva W.J.,Federal Technological University of Paraná | Yusoff A.R.B.M.,Federal University of Paraná | Yusoff A.R.B.M.,Kyung Hee University | Song Y.,Komax Systems Malaysia | And 3 more authors.
IEEE Electron Device Letters | Year: 2012

This letter reports radio frequency (RF) transistors using a high-resistivity p-type float zone silicon wafer. A high-density uniform organic semiconducting single layer is deposited using thermal evaporation technique, and RF transistors with a base layer of about 60 nm are fabricated. We report on a transistor exhibiting a cutoff frequency (f T) of 630 kHz. In addition to the cutoff frequency, other important figures of merit for the RF transistor are also presented, including the common-emitter current gain and on/off ratio. © 2011 IEEE.

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