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Bin Mohd Yusoff A.R.,Federal University of Parana | Da Silva W.J.,Federal Technological University of Parana | Song Y.,Komax Systems Malaysia | Holz E.,Komax Systems LCF SA | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2012

This paper reports the radio frequency (RF) and direct current performance of organic metal-base transistors using double emitter hole injection layers. We report on transistors exhibiting a cutoff frequency (f T) of 430 kHz at room temperature. Besides the cutoff frequency, other important key parameters for RF transistors are current gain and on /off current ratio, which are 293.46 and 50.5, respectively. © 2006 IEEE. Source


Yusoff A.R.B.M.,Federal University of Parana | Da Sillva W.J.,Federal Technological University of Parana | Song Y.,Phase IV Engineering, Inc. | Holz E.,Komax Systems LCF SA | And 2 more authors.
Electronics Letters | Year: 2012

A report is presented on a study of single emitter layer metal base transistors with a base terminal made of aluminium grids. The latter exhibits low operating voltage associated to the high resistivity of the collector terminal and also shows very low leakage current. With such a single emitter layer, common-emitter current gain, on/off current ratio, and cutoff frequency of, respectively, 239.62, 3.8×10 7, and 1.4MHz, were obtained. © 2012 The Institution of Engineering and Technology. Source


Bin Mohd Yusoff A.R.,Kyung Hee University | Da Silva W.J.,Federal Technological University of Parana | Song Y.,Komax Systems | Holz E.,Komax Systems LCF SA | And 2 more authors.
IEEE Transactions on Nanotechnology | Year: 2012

We report the realization of 140nm emitter TPD/CuPc (N,N′-diphenyl-N, N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine/copper phthalocyanine) with cutoff frequency f T = 300kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation. © 2002-2012 IEEE. Source


Da Silva W.J.,Federal Technological University of Parana | Yusoff A.R.B.M.,Federal University of Parana | Yusoff A.R.B.M.,Kyung Hee University | Song Y.,Komax Systems Malaysia | And 3 more authors.
IEEE Electron Device Letters | Year: 2012

This letter reports radio frequency (RF) transistors using a high-resistivity p-type float zone silicon wafer. A high-density uniform organic semiconducting single layer is deposited using thermal evaporation technique, and RF transistors with a base layer of about 60 nm are fabricated. We report on a transistor exhibiting a cutoff frequency (f T) of 630 kHz. In addition to the cutoff frequency, other important figures of merit for the RF transistor are also presented, including the common-emitter current gain and on/off ratio. © 2011 IEEE. Source


Schulz D.,Komax Systems LCF SA | Holz E.,Komax Systems LCF SA | Yusoff A.R.B.M.,Federal University of Parana | Song Y.,Komax Systems Malaysia | Shuib S.A.,Komax Systems Malaysia
IEEE Transactions on Electron Devices | Year: 2012

We present nonmagnetic organic transistors with wideband-gap polymer:bis[(4,6-difluorophenyl)pyridinato-N, C 2]-(picolinato) iridium(III) (P36HCTPSi:FIrpic) mixed heterojunctions, achieving a high stable current gain of 73 and 14% organic magnetocurrent effect over a wide range of collector-emitter voltages and an external magnetic field, respectively. We employed a substrate heating treatment technique during deposition of the mixed emitter layer to achieve low surface roughness and, consequently, improved the on-to-off current ratio of around 10 5. © 2006 IEEE. Source

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