Kobelco Research Institute | Date: 2014-04-28
Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.
Kobelco Research Institute | Date: 2012-02-09
Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]10070. In equation (1), A represents the XRD peak intensity in the vicinity of 2=34, B represents the XRD peak intensity in the vicinity of 2=31, C represents the XRD peak intensity in the vicinity of 2=35, and D represents the XRD peak intensity in the vicinity of 2=26.5.
Kobelco Research Institute and Toshima Manufacturing Co. | Date: 2013-03-19
The Li-containing transition metal oxide sintered compact of the present invention includes Li and a transition metal, and further includes Al, Si, Zr, Ca, and Y as impurity elements, of which contents are controlled to the following ranges: Al90 ppm; Si100 ppm; Zr100 ppm; Ca80 ppm; and Y20 ppm, wherein the sintered compact has a relative density of 95% or higher and a specific resistance of lower than 210
Kobelco Research Institute and Kobe Steel | Date: 2012-11-30
A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.
Kobelco Research Institute | Date: 2014-03-12
Provided is a sintered body comprising LiCoO