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Chate P.A.,JSM College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University | Lakade S.D.,University of Rajasthan | And 3 more authors.
Journal of Alloys and Compounds | Year: 2013

Cadmium selenide thin films have been deposited on non-conducting glass and stainless steel substrates. Films were characterized by X-ray diffraction, atomic absorption spectroscopy, scanning electron microscopy. The optical, electrical properties also studied. The X-ray diffraction analysis shows that the film samples are in cubic crystal structure. Film was found to be cadmium deficient. © 2012 Elsevier B.V. All rights reserved. Source


Chate P.A.,JSM College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University | Lakade S.D.,University of Rajasthan | And 3 more authors.
Optik | Year: 2015

The growth of indium sulphide thin films by using a chemical method was studied. The films were characterized by various experimental methods for structural, optical, electrical, and photoelectrochemical properties. The films were showed the tetragonal phase. The absorbance of the film was found to be high (104 cm-1) and the optical band gap was 2.1 eV. The electrical conductivity was of the order of 10-6 Ω cm-1. The power conversion efficiency is found to be 1.12%. © 2015 Elsevier GmbH. All rights reserved. Source


Chate P.A.,JSM College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University | Sankpal U.B.,P.A. College
Journal of Materials Science: Materials in Electronics | Year: 2013

Cadmium selenide thin films have been deposited on non-conducting glass and stainless steel substrates. Films were characterized by X-ray diffraction, atomic absorption spectroscopy. The electrical and thermoelectrical properties also studied. The X-ray diffraction analysis shows that the film samples are in cubic crystal structure. Film was found to be cadmium deficient. The efficiency of photoelectrode was found to be 1.15 % using sulphide-polysulphide electrolyte. © 2013 Springer Science+Business Media New York. Source


Chate P.A.,JSM College | Sathe D.J.,KITs Engineering College | Hankare P.P.,Shivaji University
Journal of Materials Science: Materials in Electronics | Year: 2014

We have successfully deposited cadmium indium sulphide (CdIn 2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25 eV. Activation energy was found to be 0.511 and 0.018 eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125 mV and 86 mA respectively. The calculation shows the fill factor is 33.38 %. The power conversion efficiency is found to be 1.22 %. © 2014 Springer Science+Business Media New York. Source


Chate P.A.,JSM College | Hankare P.P.,Shivaji University | Sathe D.J.,KITs Engineering College
Journal of Alloys and Compounds | Year: 2010

Cd0.9Zn0.1Se:In thin films with a variable composition (0-1.0 mol% indium) have been grown on a non-conducting glass substrate by chemical bath deposition method. The effect of doping has been investigated. The color of a film was found to be darkening with increase in the concentration of indium. X-ray diffraction, optical absorption, electrical and thermoelectrical techniques were used to characterize the films. The X-ray diffraction study indicates the crystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type of band gap, the magnitude of which varies non-linearly as the indium content in the film increases. The dc electrical conductivity increases up to 0.1 mol%. The promising features observed are the enchantment in crystallinity, grain size, electrical conductivity and decrease in band gap, up to 0.1 mol%. © 2010 Elsevier B.V. All rights reserved. Source

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