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Luk'yanchenko V.,Inmasters Ltd. | Donkov N.,Bulgarian Academy of Science | Zykova A.,Kharkov Institute of Physics and Technology | Safonov V.,Kharkov Institute of Physics and Technology | Miroshnichenko K.,Kharkov Institute of Physics and Technology
Problems of Atomic Science and Technology | Year: 2015

The study of a-C:N coatings at different concentration of nitrogen, their surface chemistry and wettability effect on cell/material response in vitro test was performed. The surface structure of deposited coatings was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM) methods. The coatings were characterized with respect to their bonding structure by photoelectron spectroscopy (XPS) analysis. The wettability was analysed by means of advanced water contact angle method and the surface free energy (SFE) was calculated according to Robertson equation. The biocompatibility was estimated by standard protocols. The best results were obtained in the case of coatings with the greater parameters of SFE and the minimal values of ratio N2: C7H8. © 2015, National Science Center, Kharkov Institute of Physics and Technology. All rights reserved.


Kovtun Y.V.,Kharkov Institute of Physics and Technology | Ozerov A.N.,Kharkov Institute of Physics and Technology | Skibenko A.I.,Kharkov Institute of Physics and Technology | Skibenko E.I.,Kharkov Institute of Physics and Technology | Yuferov V.B.,Kharkov Institute of Physics and Technology
Problems of Atomic Science and Technology | Year: 2015

A variant of the stationary reflex discharge model based on the global (volume-averaged) model is under consid-eration. The calculation is carried out on the plasma electron density and temperature as a function of the adsorbed power in the reflex discharge, magnetic field value and initial gas pressure. The density of neutral atoms and cathode material ions coming into the discharge by the cathode sputtering mechanism is determined. © 2015, National Science Center, Kharkov Institute of Physics and Technology. All rights reserved.

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