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Wang Y.,University of Science and Technology of China | Wang Y.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Li J.,University of Science and Technology of China | Li J.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Lu J.-L.,University of Science and Technology of China
Gongneng Cailiao/Journal of Functional Materials | Year: 2011

Sn2S3 thin films were prepared by vacuum vapor deposition (on glass substrates). The influences of different proportions of Sb on the structure, surface topography, chemical compositions and optical characterization of the thin films were investigated. The results show that the polycrystal thin films with 5% Sb doped can be obtained after the heat treatment for 30 mins at 380°C (protected by N2). The size of surface grains of the films is homogeneous and the film surface is compact with a slight aggregation of grains. The internal stoichiometric ratio of the thin films is 1:1.49(Sn:S), but that ratio is 1:0.543 after doped Sb(5%). Sn, S and Sb elements in the film existed with states of Sn2+, Sn4+, S2- and Sb5+, respectively. The optical transmittance rate of undoped Sn2S3 thin films is about zero in the wavelength between 350nm and 500nm; along with the increasing of wavelength, transmittance rate increases as well. The band gap is 2.2eV and the absorption bound is 564nm. After doping Sb, optical transmittance rate reduces apparently and the band gap also reduces to 1.395eV, decreasing 0.805eV comparing to the undoped Sn2S3 thin films. The absorption bounds is 889nm, which moves to infrared region. Source


Jia Y.,Inner Mongolia University of Technology | Jia Y.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Li J.,Inner Mongolia University of Technology | Li J.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Yan J.,Inner Mongolia University of Technology
Gongneng Cailiao/Journal of Functional Materials | Year: 2013

The SnS thin films were thermal evaporated on glass substrate, of which the mixed ratio for Sn:S is 1wt%:0.2wt%. After heat-treatment at 350°C for 40 min in nitrogen atmosphere, simple orthorhombic SnS polycrystalline films were obtained, with resistivity of 103 Ω·cm. Zn (2wt% and 4wt%, respectively) doping was applied to improve the conductivity of SnS thin films. The experimental results showed that the structure of Zn doped SnS thin films was turned to a mixed phase with simple orthorhombic and face-center orthorhombic, and the most effective heat-treatment condition was 300°C for 40min. The resistivity of the Zn (2wt% and 4wt%) doped SnS thin films, with n-type behavior, ranged from 1.8528×10-3 to 4.944×10-4 Ω·cm. Chemical states of Sn, S and Zn were +2, -2 and +2. Interstitials doping and substitutions doping both existed for Zn atoms in SnS thin films. Due to the crystal structure, the major contribution for the improvement of conductivity was the interstitials state. Source


Li Y.,University of Science and Technology of China | Li Y.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Li J.,University of Science and Technology of China | Li J.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Wang Y.,University of Science and Technology of China
Gongneng Cailiao/Journal of Functional Materials | Year: 2012

Pure Sn and S power were mixed with ratio of m(Sn):m(S)=1:0.41(wt%). Then 9wt% Zn power was added and single source co-evaporation was utilized to prepare Sn2S3:Zn thin films. The XRD results showed that after 55min heat-treatment, undoped Sn2S3 films, with simple orthorhombic polycrystalline, was obtained. Films, with Zn (9wt%) doped, still showed simple orthorhombic polycrystalline after 15min heat-treatment. The doping increased the surface uniformity and compactness. Average grain size increased from 35.69 nm (undoped) to 58.80 nm (doped). Doped films showed N type behavior. The resistance rate of Zn(9wt%) doped films decreased 1 magnitude order, which was 6.05×101(Ω·cm). Direct optical band gap of Sn2S3 film was 1.85 eV. The absorption edge was 551 nm; after doping Zn (9wt%), the band gap narrowed to 1.41 eV. The absorption edge was 873 nm and showed red shift. The absorption coefficient was 105 cm-1. Source


Chai Y.,University of Science and Technology of China | Chai Y.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | Li J.,University of Science and Technology of China | Li J.,Key Laboratory of Semiconductor Photovoltaic Technology for Colleges of Inner Mongolia Autonomous Region | And 2 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2011

The Sb-doped Sn2S3 films were grown by vacuum vapor deposition on glass substrates. The influence of deposition conditions, such as the Sb dosage, annealing temperature and deposition rates, on film growth was experimentally studied. The microstructures and electrical properties of the Sb-doped Sn2S3 films were characterized with X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The results show that the Sb doping and annealing significantly improve the quality of the films. For instance, annealed at 380°C for 30 min, the polycrystalline Sn2S3 film doped with 5%(at.). Sb shows an orthogonal crystalline structure;and its resistivity decreased by 3 orders of magnitude, from 79 kΩ · cm of the control sample down to 23.70 Ω · cm. Possible mechanisms were also tentatively discussed. Source

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