Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region

Hohhot, China

Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region

Hohhot, China
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Zou K.,Inner Mongolia University of Technology | Zou K.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | Li R.-P.,Inner Mongolia University of Technology | Li R.-P.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region
Chinese Rare Earths | Year: 2015

Pure CdS thin film with the structure of CdS/CdS was prepared by means of chemical bath deposition. Rare earth Dy doped film with the structure of CdS/Dy/CdS was also prepared by connecting with the electron beam evaporation method. XRD and SEM tests show that the crystallographic structure of un-doped film is found to be cubic with a preferential orientation along the (111) plane. But CdS film is a mixed structure of cubic and hexagonal phase after the deposition of Dy layer, and Dy-doping increases the grain size and lattice constant of CdS. XPS analysis indicates that the two samples are all rich in Cd. Doping with Dy helps to reduce the concentration of O and C in the films, and then inhibits the formation of oxide. The inside and surface proportion of Cd, S atoms in un-doped film are 1: 0.63 and 1: 0.71, respectively. While they are 1: 0.81 and 1: 0.83 in CdS/Dy/CdS sample, respectively. So the deposition of Dy layer between the two CdS layers promotes the combination of Cd and S, and leads to a uniform chemical composition. ©, 2015, Editorial Office of Chinese Rare Earths. All right reserved.


Zou K.,Inner Mongolia University of Technology | Zou K.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | Li R.-P.,Inner Mongolia University of Technology | Li R.-P.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | And 4 more authors.
Cailiao Gongcheng/Journal of Materials Engineering | Year: 2015

ZnTe and Sb-ZnTe polycrystalline thin films were prepared by vacuum evaporation on glass substrates and annealed in nitrogen environment. By using XRD, SEM, UV-VIS spectrophotometer and Hall effect measurements, the crystal structure, surface morphology, elemental composition, optical and electrical properties of the thin films were characterized, respectively, and the effects of Sb-doping amounts and heat treatment on the performance of the films were studied. The results show that pure ZnTe film is the cubic structure and preferentially orients in the (111) direction and its conductive type is P type. Sb-doping does not change the structure and conductive type of the films, but the intensity of diffraction peaks is lower than that of pure ZnTe films; the concentration of Sb directly affects the form of Sb in the ZnTe. Sb doping inhibits the combination of Te and Zn, and leads to the increase of Te in the films. In addition, the optical transmittance and optical band gap of the films depend on the concentration of Sb and annealing temperature, and Sb-doping can also result in an obvious increasing of carrier concentration and reduce the resistivity, which significantly enhance the conductivity of the films. ©, 2015, Cailiao Gongcheng/Journal of Materials Engineering. All right reserved.


Zou K.,Inner Mongolia University of Technology | Zou K.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | Li R.,Inner Mongolia University of Technology | Li R.,Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region | And 4 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2015

Two layers of pure CdS thin films were twice deposited by chemical bath deposition (CBD). The introduction of rare earth layer between two layers of CdS was deposited by the electron beam evaporation method, then CdS/Gd(Y)/CdS multilayer films with different thickness rare earth Gd(Y) layer were prepared. The structure, superficial topography, component, optical and electrical properties of the CdS samples were characterized by XRD, SEM, EDX, UV-VIS and Hall Effect measurements. The results show that pure CdS thin films are cubic blende structure and preferentially orient in (111) directions. Its conductive type is n type. CdS thin films doped by rare earth element Gd(Y) are a mixed structure of cubic and hexagonal phase, and the conductive type is still n type. The uniformity and compactness of the films are improved. At the same time, the proportion of Cd and S atoms in films doped by rare earth element are more close to the stoichiometric ratio of CdS. Rare earth doping can also make the transmittance in the visible region increase and result in an obvious improvement of the electrical properties, such as lower resistivity and higher carrier concentration. ©, 2015, Science Press. All right reserved.

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