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Kang H.,Key Laboratory Of Semiconductor Materials Scienceinstitute Of Semiconductorschinese Academy Of Sciencesbeijing100083Pr China | Xiao H.,Key Laboratory Of Semiconductor Materials Scienceinstitute Of Semiconductorschinese Academy Of Sciencesbeijing100083Pr China | Wang C.,Key Laboratory Of Semiconductor Materials Scienceinstitute Of Semiconductorschinese Academy Of Sciencesbeijing100083Pr China | Jiang L.,Key Laboratory Of Semiconductor Materials Scienceinstitute Of Semiconductorschinese Academy Of Sciencesbeijing100083Pr China | And 9 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

In this paper, AlGaN/GaN- and GaN/AlGaN/GaN-based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN-based SBDs are capable of greatly alleviating the unrecoverable degradation of the reverse characteristics, which was observed in the device without a GaN cap layer when the device was under long time reverse dc stress. Detailed analyses were discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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