Entity

Time filter

Source Type


Duan L.,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education of China | Duan L.,Yunnan Normal University | Zhang L.,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education of China | Zhang L.,Yunnan Normal University | And 8 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2015

Amorphous silicon (α-Si)/aluminum (Al) films were prepared by magnetron sputtering based on glass and monocrystalline silicon substrate at different temperatures, and then annealed by RTA in N2 atmosphere. X-ray diffraction (XRD) instrument and Raman scattering were used to analyse the structure and properties of μc- Si films. The results showed that monocrystalline silicon substrate and heating can improve the crystallization of α-Si/Al films; The crystalline volume fraction of μc-Si films increased with the increasing of substrate temperature from ambient to 200 ℃. And then crystalline volume fraction decreased with increasing of substrate temperature from 200 ℃ to 250 ℃. α-Si/Al films can be crystallized in the substrate of monocrystalline silicon with substrate temperatures 200 ℃. The effects of substrate parameters on crystallization rate, grain size, band gap and the volume fraction of interface were obtained by calculating. ©, 2015, Science Press. All right reserved. Source

Discover hidden collaborations