Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province

Ningbo, China

Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province

Ningbo, China

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Zhao Z.,Ningbo University | Zhao Z.,Jiaxing University | Zhao Z.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Wu B.,Ningbo University | And 18 more authors.
Laser and Photonics Reviews | Year: 2017

A mid-infrared (MIR) supercontinuum (SC) has been demonstrated in a low-loss telluride glass fiber. The double-cladding fiber, fabricated using a novel extrusion method, exhibits excellent transmission at 8–14 μm: < 10 dB/m in the range of 8–13.5 μm and 6 dB/m at 11 μm. Launched intense ultrashort pulsed with a central wavelength of 7 μm, the step-index fiber generates a MIR SC spanning from ∼2.0 μm to 16 μm, for a 40-dB spectral flatness. This is a fresh experimental demonstration to reveal that telluride glass fiber can emit across the all MIR molecular fingerprint region, which is of key importance for applications such as diagnostics, gas sensing, and greenhouse CO2 detection. (Figure presented.). © 2017 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Mi N.,Ningbo University | Mi N.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Wu B.,Ningbo University | Wu B.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | And 19 more authors.
Journal of Non-Crystalline Solids | Year: 2017

Chalcogenide suspended core fibers are considered as an excellent candidates for several applications in near-and-mid IR applications because of their characteristics of higher linearity and nonlinearity. In this paper, the influence of the fiber structure and host glass on dispersion and nonlinear properties, including the core size and the width of the bridge, especially the shape of the fiber core were analyzed with the finite element method in detail. And then, the optimized structure of SCFs made of As2S3, Ge20Sb5Se75, As2Se3, Ge15As15Se17Te5, which stand for the typical samples of S-based, Se-based and Te-based chalcogenide glasses, have been adopted to get suitable dispersion properties and highest nonlinear optical properties in all kinds of glasses. © 2017


Li Z.,Ningbo University | Li Z.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Lu Y.,Ningbo University | Lu Y.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | And 10 more authors.
Journal of Non-Crystalline Solids | Year: 2016

In this paper, the effect of Zr on the phase change properties of Ge2Sb2Te5 (GST) is systemically studied for phase-change random access memory. The sheet resistance ratio between amorphous and crystalline states achieves four to five orders of magnitude. The crystalline resistance, crystallization temperature (Tc) and the 10 years data-retention of Zr-GST films increase with the Zr concentration. Zr-GST films are crystallized into a single phase without phase separation due to the Zr bonding with Sb and Te. With the increasing annealing temperature, the transformation from face-centered cubic (fcc) to hexagonal is suppressed when the Zr atomic content is higher than 6%, which is ascribed to the lack formation of the Te-Te pairs. The wide band gap of the amorphous Zr-GST films is favorable to reduce the threshold current. The incorporating Zr atoms are embedded in the inner atomic-scale structure of the GST, which contributes to performance improvement of the GST material for phase-change random access memory. © 2016 Elsevier B.V.


Li X.,Ningbo University | Li X.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Chen J.,Shanghai JiaoTong University | Dai S.,Ningbo University | Dai S.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province
Optik | Year: 2016

We demonstrate a stable multiwavelength passively mode-locked erbium-doped fiber laser with ultra-narrow wavelength spacing and ultra-broad bandwidth. It is realized by exploiting an intracavity birefringence-induced comb filter and inhomogeneous loss mechanism based on nonlinear polarization rotation. Stable 808-line wavelength lasing with wavelength spacing of 0.07 nm and 3-dB bandwidth of 55.75 nm is achieved at room temperature. If 5-dB bandwidth of 86.15 nm is considered, the number of the lasing lines reaches 1248. In addition, the lasing wavelength lines and spacing could be flexibly tuned by modifying polarization-dependent cavity loss via properly rotating the waveplates. © 2016 Elsevier GmbH


Sun L.,Ningbo University | Sun L.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Chen F.,Ningbo University | Chen F.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | And 15 more authors.
Applied Physics A: Materials Science and Processing | Year: 2016

In this study, a series of Ge20TexSe(80−x) (x = 0, 5, 10, 20, 30, 60, 70) chalcogenide glasses were prepared using conventional melt-quenching technique. Through absorption spectra analysis, the optical Tauc gaps were derived in detail along the increase in the Te content which can be supported by structural changing of glass network shown by Raman spectra. The third-order optical nonlinearity of the glasses at mid-infrared wavelength of 3.1 μm was investigated by traditional Z-scan method. The nonlinear refractive index of the glasses increased with the increase in the Te content, typically the measured nonlinear refractive index of Ge20Se50Te30 glass increased to 8.2 ± 1.2 × 10−18 m2/W. The relationship between the nonlinear refractive index and the optical band gap was analyzed. © 2016, Springer-Verlag Berlin Heidelberg.


Ma Y.,Ningbo University | Ma Y.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Lu Y.,Ningbo University | Lu Y.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | And 11 more authors.
ECS Journal of Solid State Science and Technology | Year: 2016

In this paper, the phase change characteristics of Sb-Te-Se films were systematically studied by in-situ resistance-temperature measurement, X-ray diffraction (XRD), Raman scattering spectroscopy, X-ray photoelectron spectra (XPS), and Transmission electron microscopy (TEM). For preferred Sb56Te24Se20 and Sb55Te22Se23 films, the temperature for 10-year data retention can be up to 93.1 and 102.6C, which are higher than that of Ge2Sb2Te5 (GST, 82C). Both amorphous and crystalline resistivities increase with Se content. The resistance ratios between two states maintain almost 4 orders of magnitude. The microstructure of annealed Sb-Te-Se films exhibits uniform distribution of crystallized phases with rhombohedra Sb2SeTe2 and hexagonal Sb. The improvement in thermal stability of Sb-Te-Se films results from the atomic arrangements and consequently the complex cross bond system. © The Author(s) 2015.


Wang G.,Ningbo University | Wang G.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Shen X.,Ningbo University | Shen X.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | And 8 more authors.
Thin Solid Films | Year: 2016

The structural stability of carbon (C) incorporated Sb2Te films was investigated during crystallization process. Variations in the transition temperature for the as-deposited films during crystallization show that these films exhibit their enhanced amorphous stability due to C incorporation, while more C content will lead to a difference in the degree of disorder in the crystalline state. XPS data reveals that C atoms do not bond with Sb and Te atoms and only present in the form of [Formula presented] bonds. According to XRD and TEM results, C atoms presents amorphous and this can increase the degree of disorder in the crystalline films. The Sb2Te nanocrystals were surrounded by an amorphous C phase. A subsequent Raman analysis further provides the direct evidence of improvement in the degree of disorder in the crystalline state. The laser-induced crystallization process of C37.4(Sb2Te)62.6 reveals that the degree of disorder in the crystalline state is relatively high and the reliability during the repetitive laser melt-quenching cycles is confirmed with fast crystallization as well as a low melting point of only 353 °C. Increasing degree of disorder in the Sb2Te films by C addition can improve the phase-change behavior and make this film suitable for data storage applications. © 2016 Elsevier B.V.


Zhang P.,Ningbo University | Zhang P.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Zhao Z.,Ningbo University | Zhao Z.,Jiaxing University | And 12 more authors.
Optical Materials Express | Year: 2016

Ge20As20Se15Te45 chalcogenide glass was fabricated and systematically studied. This glass exhibits broad transmission range, high linear and non-linear refractive index, and good thermal stability. The low glass transition temperature allowed for the thermal nanoimprint to be accomplished directly on the bulk Ge20As20Se15Te45 glass to produce photonic crystals with a hybrid soft stamp. By optimizing the imprint conditions, uniform gratings with 500 nm depth grooves were fabricated by direct resist-free thermal nanoimprint lithography. © 2016 Optical Society of America.


Li G.,Ningbo University | Xu T.,Ningbo University | Xu T.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Dai S.,Ningbo University | And 5 more authors.
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | Year: 2016

Series of GaxSb40-xS60 chalcogenide glasses were synthesized by a melt-quenching method. The thermal and optical properties of sample glasses were determined by the Archimedes principle, X-ray diffraction, thermal expansion, ultra violet-visible-near infrared absorption spectroscopy, and Fourier transform infrared spectroscopy, respectively. The structures of the samples with different compositions were analyzed by Raman spectroscopy. The results show that all of the glasses have good thermal stability and spectral properties. The density decreases slightly, the glass transition temperature improves, and the thermal expansion coefficient reduces with increasing the content of gallium. Besides, there is a slightly augmentation of optic band gap and a regularly blue-shifted of IR absorption cutting-off edge. Since all of the chalcogenide glasses have a high transmittance in a wide spectrum range of 0.8-14.0 μm (covering three main commutation bands and thermal infrared band), they are thus a promising material for mid-infrared application. According to the Raman spectra, the formation of [GaS4] tetrahedral units promote and the [SbS3] pyramid units suppress with the increase of gallium content. The relationship between optical properties and the structure in the chalcogenide glasses was summarized. © 2016, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.


Pan S.,Ningbo University | Pan S.,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province | Wang Q.,CAS Shanghai Institute of Ceramics | Li H.,CAS Shanghai Institute of Ceramics | And 3 more authors.
Radiation Measurements | Year: 2016

Eu2+:CeBr3 crystals were grown by vertical Bridgman growth method and slight aliovalent doping of Eu2+ in the CeBr3 crystal did not change the crystal structure. The X-ray stimulated luminescence, photoluminescence, decay kinetics and scintillation properties were investigated at room temperature. The X-ray stimulated luminescence spectra exhibited wide broad emission bands from 3.54 eV to 2.95 eV in the Eu2+:CeBr3 crystal with high content of 620 ppm of Eu2+, which were the overlap of the emission bands ascribed to 5d → 4f transition of Ce3+ and 4f65 d1 → 4f7 transition of Eu2+, respectively. When the content of Eu2+ was decreased to 70 ppm, another emission band centered at 2.29 eV was observed. The photoluminescence spectra showed the energy transfer from Ce3+ to Eu2+. This decreased the Ce3+ emission intensity but enhanced the Eu2+ emission intensity. The photoluminescence decay time of Ce3+ emission decreased from 14 ns to 10 ns when the content of Eu2+ increased from 70 ppm to 620 ppm. The decay time of the emission of 525 nm did not change with the excitation wavelength and Eu2+ content, which could be assigned to the excitons that were bound on Eu2+ related centers. The light output of the Eu:CeBr3 crystal under the excitation of 241Am radioactive source was less than 20.2% of Tl:NaI crystal. © 2016 Elsevier Ltd. All rights reserved.

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