Deng W.,Key Laboratory of Photoelectric Information and Sensor Technology |
Deng W.,Jinan University |
Chen C.,Key Laboratory of Photoelectric Information and Sensor Technology |
Chen C.,Jinan University |
And 3 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2010
To evaluate the quality of monocrystal silicon materials, a system using surface photovoltage to mesure the minority carrier diffusion length of semiconductor is designed based on keeping the integrity of materials. The system can be used to obtain the surface photovoltage by the methods of chopper, monochromator and lock-in amplifier. The minority carrier diffusion length of semiconductor is obtained by analyzing the relationship between the surface photovoltage and the optical absorption coefficient of materials. The measuring principle of the system and the realizing methods for all models are explained in detail. The experimental results show that the surface photovoltage method with constant measure can meet the excepted requirements. Source