Tian L.,Key Laboratory of Opto Electronics Technology |
Gao Z.-Y.,Key Laboratory of Opto Electronics Technology |
Sun L.-Y.,Key Laboratory of Opto Electronics Technology |
Zou D.-S.,Key Laboratory of Opto Electronics Technology
Guangdianzi Jiguang/Journal of Optoelectronics Laser | Year: 2013
Aiming at solving the problem of the leakage increasing and the antistatic ability decreasing, which is caused by the indium tin oxide (ITO) applied for the red light LED as current spreading layer and window layer, the manufacture process of the LED device is studied step by step. The ITO current spreading layer isn't harm to the device's leakage ability or antistatic ability, but the mechanical damage caused by the chip cutting and the short circuit of PN junction contamination with ITO particle are the reasons. The mechanical damage during the chip cutting and the ITO particle contamination can be avoided by chemically etching the ITO layer in the cutting position and then etching it over the PN junction. Compared with the traditional LED, the new type of LED with ITO current spreading layer is prepared in new processes. The light extraction efficiency increases by about 10%, the antistatic ability increases by about 1.6 times and the leakage ability is not affected.