Key Laboratory of Opto electronic Information Acquisition and Manipulation

Hefei, China

Key Laboratory of Opto electronic Information Acquisition and Manipulation

Hefei, China

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Cao C.,Anhui University | Cao C.,Anhui Agricultural University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Zhang G.,Anhui Agricultural University | And 2 more authors.
Journal of the Electrochemical Society | Year: 2011

Based on the analysis of the precise current-time data and observation of the morphology by scanning electron microscopy, a layer-by-layer growth model of anodic Ti O2 nanotube (TNT) arrays was presented. Many phenomena appeared during the anodization and can be reasonably explained by this model, such as the first sharp slope of current in initial period, current fluctuation, occurring of ridges in adjacent tubes, and the rings broken off from the tube mouths. Furthermore, key factors which determine the morphology of TNT are discussed and it would be helpful for the design of nanoarchitectures in related material systems. © 2010 The Electrochemical Society.


Xiao L.,Anhui University | Xiao L.,Key Laboratory of Opto Electronic Information Acquisition and Manipulation | Cao C.B.,Anhui Agricultural University | Cao C.B.,Key Laboratory of Opto Electronic Information Acquisition and Manipulation | And 6 more authors.
Science China Technological Sciences | Year: 2010

Nano Ag-ITO films with Ag volume fraction of 0.3%-1.0% were prepared by radio-frequency magnetron co-sputtering and analyzed by X-ray diffraction, scanning electron microscopy and ultraviolet-visible spectroscopy. Microstructure analysis shows that the films are composed of polycrystalline ITO matrix embedded with Ag nanoparticles with a mean size of 60-100 nm. Transmissivity spectra of Ag-ITO films indicate that the visible light transmissivity of the films decreases with increasing the Ag fraction. The transmissivity of the annealed films is higher than that of the as-deposited films. The volume 0.3% Ag-ITO films have the highest light reflectance. The annealed films exhibit lower light absorptance than as-deposited films. A surface plasmon resonance (SPR) peak of volume 0.3% Ag-ITO films is located around 510 nm. Compared with the annealed ITO film, the annealed volume 0.3% Ag-ITO film shows 10% higher reflectivity, while its transmittance is almost the same as that of the annealed ITO film, indicating its potential application in new-type transflective displays.


Sun Z.,Anhui University | Cao C.,Anhui University | Cao C.,Anhui Agricultural University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | And 2 more authors.
Science China Technological Sciences | Year: 2010

ITO films with thicknesses (134±8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV. © 2010 Science China Press and Springer-Verlag Berlin Heidelberg.


Cao C.,Anhui Agricultural University | Cao C.,Anhui University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Zhou A.,Anhui Agricultural University | And 4 more authors.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Year: 2011

ITO and Ag-ITO composite films were deposited on glass substrates by DC magnetron sputtering. Scanning electron microscope images indicated that Ag existed in the form of nanoparticles. X-ray photoelectron spectroscopic analysis illustrated that both Ag doping and heat treatment had obvious influence on the composition and element chemical state of the films. Ag doping dramatically decreased the transmittance of the film. But after being annealed, Ag-ITO films exhibited the high average transmittance of 80-90% in visible wavelength range. By using the spectroscopic ellipsometry optimization, the optical constants were extracted from the transmittance spectra. The results suggested the potential use of Ag-ITO films for antireflection coating system. © 2011 Elsevier B.V. All rights reserved.


Cao C.-B.,Anhui Agricultural University | Cao C.-B.,Anhui University | Cao C.-B.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Xiao L.,Anhui University | And 3 more authors.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | Year: 2010

Indium tin oxide (ITO) and Ag (1.2±0.1 at. %) -ITO films with the thickness of 130 nm were deposited on glass substrates at room temperature by dc magnetron sputtering and postannealed at the temperature range of 200-400 °C. By calculating the x-ray diffraction data, the lattice constants of all samples were obtained and the results show that the annealing led to the smaller lattice constants and the Ag doping resulted in the further lattice distortion. The refractive index n and extinction coefficient k of all samples were extracted from the transmittance spectra by means of the spectroscopic ellipsometry optimization method. Ag-ITO film annealed at 400 °C has the high transmittance of 80%-90% in the visible wavelength range. Ag doping dramatically increased the extinction coefficient k of ITO films in UV wavelength range but almost without change in it in visible band. Meanwhile, by contrast with ITO films, Ag-ITO films show much higher n values than that of ITO films. Finally, the optical band gaps of all samples were determined, and it has been found that there is almost no difference of band gaps between ITO and Ag-ITO films. The reasons of the influence of annealing and Ag doping on structural and optical properties of ITO thin films are discussed. © 2010 American Vacuum Society.


Cao C.,Anhui Agricultural University | Cao C.,Anhui University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Li J.,Anhui University | And 3 more authors.
Journal of Materials Research | Year: 2011

TiO2 nanotube arrays were synthesized by anodic oxidation on a pure titanium substrate in solutions containing 0.175 M NH4F composed of mixtures with different volumetric ratios of DI water and glycerol. According to the results of the current curve recorded during anodization, the time of the first sharp current slope (corresponding to the initial oxide layer formation time) was found to vary from 8 to 171 s depending not only upon the water content in the electrolytes but also upon the voltage. The current curves exhibit oscillation with different amplitudes and periods. In combination with the scanning electron microscope (SEM) images, a growth mechanism, layer-by-layer model, of TiO2 nanotube arrays was presented. Based on this mechanism, many phenomena that appeared during anodization can be reasonably explained. Our results would be helpful for the design of nanoarchitectures in related material systems. © Materials Research Society 2011.


Chen J.-J.,Guizhou University | Cao L.,Anhui University | Song X.-P.,Anhui University | Song X.-P.,Key Laboratory of Opto Electronic Information Acquisition and Manipulation | And 2 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2010

Tantalum-doped zinc oxides transparent conducting films prepared by RF magnetron sputtering on silicon substrates at room temperature and annealed at different temperatures are characterized and analyzed by AFM and XPS. The morphological properties of Ta-ZnO films influenced by the Ta2O5 content and annealing temperature are studied. The maximum average grain size 94.46nm and the minimum surface roughness 4.48nm can be obtained for the Ta-ZnO film with the Ta2O5 content of 5wt%, the surface roughness of this film first increases and then decreases with increasing of the annealing temperature from room temperature to 500°C and the average grain size is in the range of 94.46 to 118.05nm.


Song X.,Anhui University | Song X.,Key Laboratory of Opto Electronic Information Acquisition and Manipulation | Song X.,Anhui Key Laboratory of Information Materials and Devices | Shi S.,Anhui University | And 12 more authors.
Journal of Alloys and Compounds | Year: 2013

The ZnS:Ag nano-composite films with different Ag volume fractions (5, 10, 15 and 2 vol.%) were deposited on glass substrates by sputtering. The microstructures, optical and electrical properties of the as-deposited films were studied. XRD measurement shows that all films are polycrystalline with a microstructure of body-centered cubic phase belonged to ZnS. The samples in which Ag volume concentrations lower than 20 vol.% show a preferential orientation along the (2 2 0) direction. When Ag concentration reaches 20 vol.%, the intensity of the (2 2 0) peak belonged to ZnS decreases dramatically while the Ag (1 1 1) peak emerged. Based on our analysis, it can be noted that Ag can help the ZnS grains grow when Ag concentration is lower than 20 vol.%. However, the ZnS crystal growth is suppressed when Ag concentration is 20 vol.%. The refractive index of the samples decreases with the increase of Ag concentration while the extinction coefficient of the samples increases. The resistivity of the film reaches the minimum when Ag concentration is 20 vol.%, showing the electrical conductivity improvement of the composite film by doped Ag nano-particles. © 2012 Elsevier B.V. All rights reserved.


Shi S.,Anhui University | Shi S.,Key Laboratory of Opto Electronic Information Acquisition and Manipulation | Shi S.,Anhui Key Laboratory of Information Materials and Devices | He G.,Anhui University | And 19 more authors.
Science of Advanced Materials | Year: 2012

The undoped and molybdenum doped ZnO (MZO) films were deposited on quartz substrates by radio frequency magnetron sputtering. Mo-doping influences the grain size of the films and leads to a compressive stress in MZO films. XPS reveals that there is only Mo 6+, no Mo 5+ or Mo 4+, in the MZO films. Mo doping introduces two effects on Zn 2p 3/2 XPS spectra, one is the decrease of binding energy of Zn 2p 3/2, and the other is the emergence of a smaller peak at 1022.0 eV in Zn 2p 3/2 spectrum. The optical bandgap of MZO films is in the range of 3.30-3.31 eV, larger than 3.29 eV of the undoped ZnO films. The resistivity of MZO films, which is in the range of 0.062-6.18 Ωcm, decreases first and then increases with the increase of Mo content. The resistivity of MZO films reaches the minimum when the Mo doping concentration is 2 wt.%. According to our observation, it can be supposed that proper doping level of Mo can stimulate the formation of Zn i and prompt the conductivity of MZO films. Annealing in air causes a significant increase in resistivity of the MZO films, which can be attributed to the adsorption of oxygen and the concentration change of the donor defects Zn i and its complexes defects in the annealing process. © 2012 by American Scientific Publishers.


Lu L.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Zhang K.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Dai J.-J.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Zhu J.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | And 3 more authors.
Guangxue Jingmi Gongcheng/Optics and Precision Engineering | Year: 2011

The self-mixing interference based on a Vertical-cavity Surface-Emitting Laser(VCSEL) was investigated. By taking a VCSEL as the source of a self-mixing interferometric system, the effect of different types of scattering surfaces and injection currents on the self-mixing signals was analyzed. It is concluded that the black and glossy photographic paper target will bring unfavorable influence on the self-mixing velocimeter and the operating currents with 1-1.4 times of the threshold currents can offer a self-mixing signal with a stable and great amplitude. For the longer preheating time, the power-up time of self-mixing velocimeter was discussed, and the results show that Doppler frequency will be stable and accurate after 17 s. The obtained results provide instructions for the parameter optimization and the choice of light source of a self-mixing velocimeter using the VCSEL.

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