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Chen J.-J.,Guizhou University | Cao L.,Anhui University | Song X.-P.,Anhui University | Song X.-P.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | And 2 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2010

Tantalum-doped zinc oxides transparent conducting films prepared by RF magnetron sputtering on silicon substrates at room temperature and annealed at different temperatures are characterized and analyzed by AFM and XPS. The morphological properties of Ta-ZnO films influenced by the Ta2O5 content and annealing temperature are studied. The maximum average grain size 94.46nm and the minimum surface roughness 4.48nm can be obtained for the Ta-ZnO film with the Ta2O5 content of 5wt%, the surface roughness of this film first increases and then decreases with increasing of the annealing temperature from room temperature to 500°C and the average grain size is in the range of 94.46 to 118.05nm. Source


Sun Z.,Anhui University | Cao C.,Anhui University | Cao C.,Anhui Agricultural University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | And 2 more authors.
Science China Technological Sciences | Year: 2010

ITO films with thicknesses (134±8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV. © 2010 Science China Press and Springer-Verlag Berlin Heidelberg. Source


Cao C.,Anhui Agricultural University | Cao C.,Anhui University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Li J.,Anhui University | And 3 more authors.
Journal of Materials Research | Year: 2011

TiO2 nanotube arrays were synthesized by anodic oxidation on a pure titanium substrate in solutions containing 0.175 M NH4F composed of mixtures with different volumetric ratios of DI water and glycerol. According to the results of the current curve recorded during anodization, the time of the first sharp current slope (corresponding to the initial oxide layer formation time) was found to vary from 8 to 171 s depending not only upon the water content in the electrolytes but also upon the voltage. The current curves exhibit oscillation with different amplitudes and periods. In combination with the scanning electron microscope (SEM) images, a growth mechanism, layer-by-layer model, of TiO2 nanotube arrays was presented. Based on this mechanism, many phenomena that appeared during anodization can be reasonably explained. Our results would be helpful for the design of nanoarchitectures in related material systems. © Materials Research Society 2011. Source


Shi S.,Anhui University | Shi S.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Shi S.,Anhui Key Laboratory of Information Materials and Devices | He G.,Anhui University | And 19 more authors.
Science of Advanced Materials | Year: 2012

The undoped and molybdenum doped ZnO (MZO) films were deposited on quartz substrates by radio frequency magnetron sputtering. Mo-doping influences the grain size of the films and leads to a compressive stress in MZO films. XPS reveals that there is only Mo 6+, no Mo 5+ or Mo 4+, in the MZO films. Mo doping introduces two effects on Zn 2p 3/2 XPS spectra, one is the decrease of binding energy of Zn 2p 3/2, and the other is the emergence of a smaller peak at 1022.0 eV in Zn 2p 3/2 spectrum. The optical bandgap of MZO films is in the range of 3.30-3.31 eV, larger than 3.29 eV of the undoped ZnO films. The resistivity of MZO films, which is in the range of 0.062-6.18 Ωcm, decreases first and then increases with the increase of Mo content. The resistivity of MZO films reaches the minimum when the Mo doping concentration is 2 wt.%. According to our observation, it can be supposed that proper doping level of Mo can stimulate the formation of Zn i and prompt the conductivity of MZO films. Annealing in air causes a significant increase in resistivity of the MZO films, which can be attributed to the adsorption of oxygen and the concentration change of the donor defects Zn i and its complexes defects in the annealing process. © 2012 by American Scientific Publishers. Source


Cao C.,Anhui University | Cao C.,Anhui Agricultural University | Cao C.,Key Laboratory of Opto electronic Information Acquisition and Manipulation | Zhang G.,Anhui Agricultural University | And 2 more authors.
Journal of the Electrochemical Society | Year: 2011

Based on the analysis of the precise current-time data and observation of the morphology by scanning electron microscopy, a layer-by-layer growth model of anodic Ti O2 nanotube (TNT) arrays was presented. Many phenomena appeared during the anodization and can be reasonably explained by this model, such as the first sharp slope of current in initial period, current fluctuation, occurring of ridges in adjacent tubes, and the rings broken off from the tube mouths. Furthermore, key factors which determine the morphology of TNT are discussed and it would be helpful for the design of nanoarchitectures in related material systems. © 2010 The Electrochemical Society. Source

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