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Ding J.-N.,Jiangsu Polytechnic University | Ding J.-N.,Jiangsu University | Ding J.-N.,Key Laboratory of New Energy Source | Li C.-L.,Jiangsu Polytechnic University | And 8 more authors.
Physics Letters, Section A: General, Atomic and Solid State Physics | Year: 2010

The density functional calculation with the generalized gradient approximation is applied to study the structural, electronic and vibrational properties of Inn Sbn clusters up to n = 16. A family of fullerene-like Inn Sbn clusters with n = 9 - 16 is found. Meanwhile In5 Sb5 and In12 Sb12 show obvious magic-number behavior. We also discuss the size dependence of binding energies, gap between highest-occupied and lowest-unoccupied molecular orbitals, second-difference of total energies, electron affinities, ionization potential, Mulliken charges, and the IR spectra of Inn Sbn clusters. © 2009 Elsevier B.V. All rights reserved.


Zhu Y.Y.,Jiangsu Polytechnic University | Zhu Y.Y.,Key Laboratory of New Energy Source | Ding G.Q.,Jiangsu Polytechnic University | Ding G.Q.,Key Laboratory of New Energy Source | And 4 more authors.
Nanoscale Research Letters | Year: 2010

Porous anodic alumina (PAA) has been intensively studied in past decade due to its applications for fabricating nanostructured materials. Since PAA's pore diameter, thickness and shape vary too much, a systematical study on the methods of morphology characterization is meaningful and essential for its proper development and utilization. In this paper, we present detailed AFM, SEM and TEM studies on PAA and its evolvements with abundant microstructures, and discuss the advantages and disadvantages of each method. The sample preparation, testing skills and morphology analysis are discussed, especially on the differentiation during characterizing complex cross-sections and ultrasmall nanopores. The versatility of PAAs is also demonstrated by the diversity of PAAs' microstructure. © 2010 The Author(s).


Ding G.Q.,Jiangsu Polytechnic University | Ding G.Q.,Key Laboratory of New Energy Source | Yang R.,Jiangsu Polytechnic University | Yang R.,Key Laboratory of New Energy Source | And 5 more authors.
Applied Surface Science | Year: 2010

In this paper, we firstly present a novel microscale-step structure fabricated by anodizing aluminum in a mixture of 0.05-0.5 wt% NaCl (HCl), 2 wt% H3PO4 and 20 wt% ethanol under potentials of 1-40 V at room temperature. Then, we present two micro-nano combined structures by integrating the microsteps with nanopores through multi-step anodizations. The microstep-nanopore hierarchical structure was obtained by re-anodizing the sample in oxalic acid, and the regular nanopores can be realized on the microscale patterned aluminum surface. The two-layer porous structure was one layer of nanoporous anodic alumina and another layer of micropores by two-step anodization on sample's both sides. These two novel structures can be useful for surface engineering and high flux filtration, respectively. The current fabrication approach broadens the applications of aluminum anodization, and brings a new method for assembling micro-nano structures. © 2010 Elsevier B.V. All rights reserved.


Ding G.Q.,Jiangsu Polytechnic University | Ding G.Q.,Key Laboratory of New Energy Source | Yang R.,Jiangsu Polytechnic University | Yang R.,Key Laboratory of New Energy Source | And 6 more authors.
Nanoscale Research Letters | Year: 2010

Anodization of Al foil under low voltages of 1-10 V was conducted to obtain porous anodic aluminas (PAAs) with ultrasmall nanopores. Regular nanopore arrays with pore diameter 6-10 nm were realized in four different electrolytes under 0-30°C according to the AFM, FESEM, TEM images and current evolution curves. It is found that the pore diameter and interpore distance, as well as the barrier layer thickness, are not sensitive to the applied potentials and electrolytes, which is totally different from the rules of general PAA fabrication. The brand-new formation mechanism has been revealed by the AFM study on the samples anodized for very short durations of 2-60 s. It is discovered for the first time that the regular nanoparticles come into being under 1-10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultrasmall nanopores. Under higher potentials from 10 to 40 V, the surface nanoparticles will be less and less and nanopores transform into general PAAs. © 2010 The Author(s).


Wang X.-Q.,Jiangsu Polytechnic University | Wang X.-Q.,Jiangsu University | Ding J.-N.,Jiangsu Polytechnic University | Ding J.-N.,Jiangsu University | And 7 more authors.
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 | Year: 2010

We synthesized undoped and Mn-doped ZnO films on glass substrates using the sol-gel technique. The micro-structure, morphology and optical properties of ZnO films were studied by using X-ray diffraction, Atomic Force Microscope and UV-visible transmission spectra. After annealed at a temperature lower than 550 °C by Rapid Thermal Processing (RTP), all the ZnO films are polycrystalline with a hexagonal wurtzite structure. For Mn-doped ZnO films, although no peak corresponding to manganese oxide is observed in XRD spectrums, the lattice constants of the films become larger and the optical band-gaps increase with the increase of annealing temperature, which is different from the result of un-doped ZnO films. These measurements indicate that Mn2+ has substituted for Zn2+ in the films even annealed at a temperature as low as 300 °C. ©2010 IEEE.


Ding J.-N.,Jiangsu Polytechnic University | Ding J.-N.,Jiangsu University | Ding J.-N.,Key Laboratory of New Energy Source | Wang J.-X.,Jiangsu University | And 5 more authors.
Chinese Physics B | Year: 2010

The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory. Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content. The density of states, the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon. It is found that the Si-Si bonds are affected by H atoms, which results in the electronic band transformation from indirect gap to direct gap. This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory. © 2010 Chinese Physical Society and IOP Publishing Ltd.


Ding J.-N.,Changzhou University | Ding J.-N.,Key Laboratory of New Energy Source | Ye F.,Changzhou University | Ye F.,Key Laboratory of New Energy Source | And 4 more authors.
Key Engineering Materials | Year: 2011

In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement. © (2011) Trans Tech Publications.


Ding J.N.,Changzhou University | Wang X.F.,Changzhou University | Yuan N.Y.,Changzhou University | Yuan N.Y.,Key Laboratory of New Energy Source | And 3 more authors.
Surface and Coatings Technology | Year: 2011

Aluminum oxide (Al2O3) films were produced on n-type (001) Si, SiO2 and polyimide (PI) substrates by atomic layer deposition method (ALD). The surface morphologies of the coatings were characterized by XRD and AFM, respectively. The adhesive properties of the deposits were investigated as a function of the nature of the substrate using the micro-scratch test. The Al2O3 ALD films on SiO2, Si and PI substrates exhibited quite different scratch morphologies and failure modes. For about 100nm thick Al2O3 ALD films, the critical loads are 304.6±8, 144.6±8 and 41.6±3mN on SiO2, Si and PI substrates, respectively, while the corresponding calculated adhesion energies are 18.7, 3.8 and 0.12J/m2. So the large difference in adhesion energy was discussed from the growth mechanisms of Al2O3 on SiO2, Si and PI substrates. © 2010 Elsevier B.V.


Kan B.,Changzhou University | Kan B.,Key Laboratory of New Energy Source | Ding J.,Changzhou University | Ding J.,Key Laboratory of New Energy Source | And 11 more authors.
Journal of Computational and Theoretical Nanoscience | Year: 2011

The buckling properties of 7-5-5-7 defected single walled carbon nanotubes under axial compression are studied using molecular dynamics simulations. Critical buckling strains and buckling morphologies of nanotubes with different diameters are investigated and compared with those of pristine nanotubes. Due to the 7-5-5-7 defect, the reduction amplitude of critical strain of nanotube can be as large as 11.4%. The initial buckling kinks occur near the defect location. Different asymmetry buckling morphologies are observed for nanotubes with different diameters. Special focus is given to the influence of defect orientation on the buckling properties of 7-5-5-7 defected nanotubes. It is found that critical buckling strain is reduced as the defect orientation angle decreases, and buckling morphology varies with defect orientation angle. Copyright © 2011 American Scientific Publishers.


Ding J.N.,Changzhou University | Ding J.N.,Key Laboratory of New Energy Source | Ye F.,Changzhou University | Ye F.,Key Laboratory of New Energy Source | And 10 more authors.
Applied Surface Science | Year: 2010

Aluminum doped zinc oxide (AZO) transparent conducting films were dynamically deposited on corning glass substrates in an in-line sputtering system operated at mid-frequency sputtering mode with excitation frequency of 40 kHz. This study addressed the surface structure as well as the electrical and optical properties after wet-chemical etching. With the increase of substrate temperature, the dominant orientation of the as-deposited films changes from (0 0 2) to (1 0 3). After wet-chemical etching, due to the quick etching rate of the (0 0 2) plane relative to the (1 0 3) plane, the surface morphology of the films deposited at different temperatures show a transition from craterlike to granular surface morphology. The experimental results demonstrate that the crystal orientation of the as-deposited films plays an important role for the etching behavior of the films. © 2010 Elsevier B.V. All rights reserved.

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