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Ding J.N.,Changzhou University | Wang X.F.,Changzhou University | Yuan N.Y.,Changzhou University | Yuan N.Y.,Key Laboratory of New Energy Source | And 3 more authors.
Surface and Coatings Technology | Year: 2011

Aluminum oxide (Al2O3) films were produced on n-type (001) Si, SiO2 and polyimide (PI) substrates by atomic layer deposition method (ALD). The surface morphologies of the coatings were characterized by XRD and AFM, respectively. The adhesive properties of the deposits were investigated as a function of the nature of the substrate using the micro-scratch test. The Al2O3 ALD films on SiO2, Si and PI substrates exhibited quite different scratch morphologies and failure modes. For about 100nm thick Al2O3 ALD films, the critical loads are 304.6±8, 144.6±8 and 41.6±3mN on SiO2, Si and PI substrates, respectively, while the corresponding calculated adhesion energies are 18.7, 3.8 and 0.12J/m2. So the large difference in adhesion energy was discussed from the growth mechanisms of Al2O3 on SiO2, Si and PI substrates. © 2010 Elsevier B.V.

Ding G.Q.,Jiangsu Polytechnic University | Ding G.Q.,Key Laboratory of New Energy Source | Yang R.,Jiangsu Polytechnic University | Yang R.,Key Laboratory of New Energy Source | And 5 more authors.
Applied Surface Science | Year: 2010

In this paper, we firstly present a novel microscale-step structure fabricated by anodizing aluminum in a mixture of 0.05-0.5 wt% NaCl (HCl), 2 wt% H3PO4 and 20 wt% ethanol under potentials of 1-40 V at room temperature. Then, we present two micro-nano combined structures by integrating the microsteps with nanopores through multi-step anodizations. The microstep-nanopore hierarchical structure was obtained by re-anodizing the sample in oxalic acid, and the regular nanopores can be realized on the microscale patterned aluminum surface. The two-layer porous structure was one layer of nanoporous anodic alumina and another layer of micropores by two-step anodization on sample's both sides. These two novel structures can be useful for surface engineering and high flux filtration, respectively. The current fabrication approach broadens the applications of aluminum anodization, and brings a new method for assembling micro-nano structures. © 2010 Elsevier B.V. All rights reserved.

Ding J.-N.,Jiangsu Polytechnic University | Ding J.-N.,Jiangsu University | Ding J.-N.,Key Laboratory of New Energy Source | Li C.-L.,Jiangsu Polytechnic University | And 8 more authors.
Physics Letters, Section A: General, Atomic and Solid State Physics | Year: 2010

The density functional calculation with the generalized gradient approximation is applied to study the structural, electronic and vibrational properties of Inn Sbn clusters up to n = 16. A family of fullerene-like Inn Sbn clusters with n = 9 - 16 is found. Meanwhile In5 Sb5 and In12 Sb12 show obvious magic-number behavior. We also discuss the size dependence of binding energies, gap between highest-occupied and lowest-unoccupied molecular orbitals, second-difference of total energies, electron affinities, ionization potential, Mulliken charges, and the IR spectra of Inn Sbn clusters. © 2009 Elsevier B.V. All rights reserved.

Ding J.-N.,Jiangsu Polytechnic University | Ding J.-N.,Jiangsu University | Ding J.-N.,Key Laboratory of New Energy Source | Wang J.-X.,Jiangsu University | And 5 more authors.
Chinese Physics B | Year: 2010

The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory. Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content. The density of states, the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon. It is found that the Si-Si bonds are affected by H atoms, which results in the electronic band transformation from indirect gap to direct gap. This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory. © 2010 Chinese Physical Society and IOP Publishing Ltd.

Ding J.-N.,Changzhou University | Ding J.-N.,Key Laboratory of New Energy Source | Ye F.,Changzhou University | Ye F.,Key Laboratory of New Energy Source | And 4 more authors.
Key Engineering Materials | Year: 2011

In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement. © (2011) Trans Tech Publications.

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