Chen G.,Sichuan University |
Chen G.,Microelectronics Technology Key Laboratory of Sichuan Province |
Gao B.,Sichuan University |
Gao B.,Microelectronics Technology Key Laboratory of Sichuan Province |
And 2 more authors.
Journal of Semiconductors | Year: 2013
A radiation-hardened flip - flop is proposed to mitigate the single event upset (SEU) effect. Immunity was achieved through the use of C-elements and redundant storage elements. It takes advantage of the property of a C-element in which it enters a high impedance mode when its inputs are of different logic values. Redundant storage nodes are then used to drive the C-elements so that a single upset pulse in any storage will be prevented from altering the state of the output of the flip - flop. The flip - flop was implemented using 48 transistors and occupied an area of 30.78 μm2, using 65 nm CMOS process. It consumed 22.6% fewer transistors as compared to the traditional SEU resilient TMR flip - flop. © 2013 Chinese Institute of Electronics.