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Wang X.,Key Laboratory Of Microelectronics Device And Integrated Technologyinstitute Of Microelectronics Of Chinese Academy Of Sciencesbeijing100029Pr China | Huang S.,Key Laboratory Of Microelectronics Device And Integrated Technologyinstitute Of Microelectronics Of Chinese Academy Of Sciencesbeijing100029Pr China | Bao Q.,Key Laboratory Of Microelectronics Device And Integrated Technologyinstitute Of Microelectronics Of Chinese Academy Of Sciencesbeijing100029Pr China | Liu X.,Key Laboratory Of Microelectronics Device And Integrated Technologyinstitute Of Microelectronics Of Chinese Academy Of Sciencesbeijing100029Pr China
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

The low-pressure chemical vapor deposition (LPCVD)-SiNx layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer in GaN device fabrication. The effect of alloying temperature on the LPCVD-SiNx/GaN interface and LPCVD-SiNx dielectric film is evaluated by the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The C-V analysis by frequency-dependent method and Terman method shows that the higher density of interface states occurs at the higher alloying temperature, while I-V analysis indicates that the higher alloying temperature can lead to smaller current density with slightly deeper traps for Poole-Frenkel conduction. The hydrogen-related bonds may be the cause and affects the interfacial properties of LPCVD-SiNx/GaN as well as the electrical properties of LPCVD-SiNx film. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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