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Yu Y.,Key Laboratory of Micro Nano Systems for Aerospace | Yu Y.,Northwestern Polytechnical University | Zappe H.,Albert Ludwigs University of Freiburg
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 | Year: 2014

Three-dimensional (3D) plasmon Talbot effect is experimentally investigated on three finite-sized, two-dimensional (2D) periodical arrays composed of subwavelength nanoholes with different fill factors. By using water as the output medium, both the focusing behavior and the plasmon Talbot revivals are clearly observed even when the operating wavelength is larger than the array period. And theoretically, with the output material having a refractive index of n, the operating wavelength to realize the plasmon Talbot effect can be enlarged by a factor of n-1. The integral and fractional plasmon Talbot revivals reproduce the device pattern with rich subwavelength hotspots (0.56∼0.72λ) in exactly the same array period, which shows a great prospect for the low-cost, large-scale micro- and nanolithography. The preliminary experimental results indicate that the fill factor doesn't play an obvious influence on the size of the achieved plasmon Talbot hotspots. © 2014 IEEE.


Liu Y.,Key Laboratory of Micro Nano Systems for Aerospace | Liu Y.,Shaanxi Province Key Laboratory of Micro and Nano Electro Mechanical Systems | Yuan W.,Key Laboratory of Micro Nano Systems for Aerospace | Yuan W.,Shaanxi Province Key Laboratory of Micro and Nano Electro Mechanical Systems | And 7 more authors.
Chinese Optics Letters | Year: 2013

The design of a two-dimensional high-frequency electrostatic microscanner is presented, and an improved method for routing isolation trenches is investigated to increase the reliability and mechanical stability of the resulting device. A sample device is fabricated and tested using an optimized micromachining process. Measurement results indicate that the sample device oscillates at inherent frequencies of 11586 and 2047 Hz around the two rotational axes, thereby generating maximum twisting angles of ±7.28° and ±5.63°, respectively, under two square waves of 40 V. These characteristics confirm the validity of our design and satisfy the requirements of a laser projector with VGA standards. © 2013 Chinese Optics Letters.


He Y.,Key Laboratory of Micro Nano Systems for Aerospace | Jiang C.,Key Laboratory of Micro Nano Systems for Aerospace | Wang S.,Key Laboratory of Micro Nano Systems for Aerospace | Hao Y.,Key Laboratory of Micro Nano Systems for Aerospace | And 4 more authors.
ACS Applied Materials and Interfaces | Year: 2014

Understanding the function of nanoscale structure morphology in ice adhesion properties is important in deicing applications. The correlation between ice adhesion and nanowire morphology as well as the corresponding ice shear fracture mechanism are presented for the first time. Ice adhesion on nanowires was measured using a tangential ice-detaching instrument that was developed in-house. Stress analysis was performed using a COMSOL software. Nanowire surface shifted from Wenzel to Cassie transition and Cassie wetting states when the nanowire length was increased. Tangential ice-detaching forces were greater on the hydrophilic surface than those on the hydrophobic surface. Ice-ice internal shear fracture occurred on the ice and force probe contact area at the Wenzel state or on the ice and nanowire contact area at Cassie transition and Cassie state. Different lengths of nanowires caused different wetting states; thus, different fracture areas were formed, which resulted in different tangential ice-detaching forces. This paper presents a new way of tailoring surface ice adhesion via rational design of nanowire morphology with different wetting states. © 2014 American Chemical Society.


Jiao W.,Northwestern Polytechnical University | Jiao W.,Key Laboratory of Micro Nano Systems for Aerospace | Yuan W.,Northwestern Polytechnical University | Yuan W.,Key Laboratory of Micro Nano Systems for Aerospace | And 2 more authors.
Journal of Semiconductors | Year: 2015

Geometric nonlinear behaviors of micro resonators have attracted extensive attention of MEMS (micro-electro-mechanical systems) researchers, and MEMS transducers utilizing these behaviors have been widely researched and used due to the advantages of essentially digital output. Currently, the design of transducers with nonlinear behaviors is mainly performed by numerical method and rarely by system level design method. In this paper, the geometric nonlinear beam structure was modeled and established as a reusable library component by system level modeling and simulation method MuPEN (multi port element network). A resonant accelerometer was constructed and simulated using this model together with MuPEN reusable library. The AC (alternating current) analysis results of MuPEN model agreed well with the results of architect model and the experiment results shown in the existing reference. Therefore, we are convinced that the beam component based on MuPEN method is valid, and MEMS system level design method and related libraries can effectively model and simulate transducers with geometric nonlinear behaviors if appropriate system level components are available. © 2015 Chinese Institute of Electronics.


Xie J.,Northwestern Polytechnical University | Xie J.,Key Laboratory of Micro Nano Systems for Aerospace | Song M.,Northwestern Polytechnical University | Song M.,Key Laboratory of Micro Nano Systems for Aerospace | And 2 more authors.
8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013 | Year: 2013

This paper provides an enhanced inertial mass SOI MEMS process for the fabrication of a high sensitivity micromachined accelerometer. In the proposed process, the handle layer of the SOI wafer is used as an enhanced inertial mass, in this way, the inertial mass of the accelerometer can increase 5-15 times. Therefore, the sensitivity of the MEMS accelerometer can be significantly increased. In this paper, an in-plane single-axis accelerometer is designed firstly. And then, the accelerometer is fabricated in a low resistivity SOI wafer with 60μm thickness device layer and 400μm thickness handle layer through the developed enhanced inertial mass SOI MEMS process. The sensitivity of the fabricated MEMS accelerometer is 2.257V/g, the linearity of output is within 0.5%, and the power spectral density of the noises is as low as 6.79uV/√Hz. © 2013 IEEE.

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