Shang L.,Guizhou University |
Shang L.,Key Laboratory of Micro Nano Electronics of Guizhou Province |
Luo Z.,Guizhou University |
Luo Z.,Key Laboratory of Micro Nano Electronics of Guizhou Province |
And 12 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2012
The InGaAs thin film, 19 monolayers in thickness, was grown on the GaAs (001) substrate covered with a buffer layer 0.37 μm thick, by ultrahigh vacuum, molecular beam epitaxy (UHV-MBE). The reconstructed surfaces of the InGaAs were characterized in-situ with reflection high energy diffraction (RHEED), and scanning tunneling microscopy (STM) installed at the same vacuum chamber. The stoichiometries of indium and gallium were found to be roughly In 0.14 and Ga 0.86, respectively. The atomically resolved results show that the dominant 4×3 reconstruction co-exists with a small amount of α2 (2×4) patterns. The RHEED images were simulated with a dedicated software package, and the simulated results agree fairly well with the observation.