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Fu P.,Dalian National Laboratory for Clean Energy | Fu P.,University of Chinese Academy of Sciences | Yang D.,Dalian National Laboratory for Clean Energy | Yang D.,University of Chinese Academy of Sciences | And 5 more authors.
Science China Chemistry | Year: 2015

We assembled a ternary blend bulk heterojunction polymer solar cell (PSCs) containing P3HT (donor) and PC61BM (acceptor) incorporated with a dihexyl-quaterthiophene (DH4T) small molecule oligomer as a third component. By optimizing the contents of DH4T, we increased the power conversion efficiency of ternary P3HT:DH4T:PC61BM PSCs to 4.17% from 3.44% of binary P3HT:PC61BM PSCs under AM 1.5 G of 100 mW/cm2 intensity. The major improvement is from the increase of the short circuit current and fill factor that is due to the increased light absorption at short wavelength, the balanced charge carrier transportation and the enhanced hole evacuation by a DH4T-enriched layer at the anode interface. In this work, we demonstrate that the efficiency of the PSCs can be enhanced by using low-bandgap conjugated polymer and its oligomer as donors and fullerene derivatives as acceptors. © 2015 Science China Press and Springer-Verlag Berlin Heidelberg.


Fu P.,State Key Laboratory of Catalysis | Yang D.,State Key Laboratory of Catalysis | Zhang F.,Key Laboratory of Luminescence and Optical Information | Yu W.,State Key Laboratory of Catalysis | And 2 more authors.
Science China Chemistry | Year: 2015

We assembled a ternary blend bulk heterojunction polymer solar cell (PSCs) containing P3HT (donor) and PC61BM (acceptor) incorporated with a dihexyl-quaterthiophene (DH4T) small molecule oligomer as a third component. By optimizing the contents of DH4T, we increased the power conversion efficiency of ternary P3HT:DH4T:PC61BM PSCs to 4.17% from 3.44% of binary P3HT:PC61BM PSCs under AM 1.5 G of 100 mW/cm2 intensity. The major improvement is from the increase of the short circuit current and fill factor that is due to the increased light absorption at short wavelength, the balanced charge carrier transportation and the enhanced hole evacuation by a DH4T-enriched layer at the anode interface. In this work, we demonstrate that the efficiency of the PSCs can be enhanced by using low-bandgap conjugated polymer and its oligomer as donors and fullerene derivatives as acceptors. © 2015 Science China Press and Springer-Verlag Berlin Heidelberg


Peng J.,Beijing Jiaotong University | Peng J.,Key Laboratory of Luminescence and Optical Information | Zheng Y.,Beijing Jiaotong University | Zheng Y.,Key Laboratory of Luminescence and Optical Information | And 4 more authors.
Applied Optics | Year: 2012

Compact passively Q-switched and mode-locked Nd3+:YVO 4/Cr4+:YAG self-Raman laser with high mode-locked repetition rate was demonstrated. The picosecond first Stokes at 1176 nm was successfully obtained. At the maximum incident pump power, the average output power was 95 mW with the mode-locked pulse repetition rate of 940 MHz. Yellow laser output of 588.2 nm was also realized by the use of LiB3O 5 frequency doubling crystal. © 2012 Optical Society of America.


Peng J.Y.,Beijing Jiaotong University | Zheng Y.,Key Laboratory Of Luminescence and Optical Information | Shen J.P.,Key Laboratory Of Luminescence and Optical Information | Shi Y.X.,Key Laboratory Of Luminescence and Optical Information
Laser Physics | Year: 2013

An original diode-pumped Q-switched and mode-locked solid state Nd:GdVO4 laser is demonstrated. The laser operates with double saturable absorbers and a new coupled laser cavity. The Q-switching envelope width is compressed to be about 15 ns and the mode-locking repetition rate is as low as 90 MHz. © 2013 Astro Ltd.


Peng J.,Beijing Jiaotong University | Peng J.,Key Laboratory of Luminescence and Optical Information | Zheng Y.,Beijing Jiaotong University | Zheng Y.,Key Laboratory of Luminescence and Optical Information | And 4 more authors.
Optics Communications | Year: 2012

Passively Q-switched mode locking in a compact Nd:GdVO 4 self-Raman laser with a Cr:YAG saturable absorber was demonstrated. The picosecond first stokes at 1173 nm was successfully obtained. When the optical cavity length changed from 167 mm to 120 mm, the mode-locked pulse repetition rate increased from 0.9 GHz to 1.25 GHz. At the maximum diode pump power of 10 W and with a pulse repetition rate of 0.9 GHz, an average output power up to 105 mW has been achieved at 1173 nm. In addition, the yellow laser output at 586.5 nm was also realized by frequency doubling with an LBO crystal. © 2012 Elsevier B.V. All rights reserved.


Li Z.H.,Beijing Jiaotong University | Li Z.H.,Key Laboratory of Luminescence and Optical Information | Peng J.Y.,Beijing Jiaotong University | Peng J.Y.,Key Laboratory of Luminescence and Optical Information | And 2 more authors.
Optics and Laser Technology | Year: 2014

In this paper we report on a mode-locked self-Raman 1.17 μm Nd:GdVO 4 laser. We successfully achieved stable CW mode-locked pulse in a diode-pumped self-Raman Nd:GdVO4 laser with a novel design of cavity included a dichroic mirror used in a special way. With an incident pump power of 10 W, the average output powers was up to 103 mW at a repetition rate of 145 MHz. © 2013 Published by Elsevier Ltd.


Wang Z.,Beijing Jiaotong University | Wang Z.,Key Laboratory of Luminescence and Optical Information | Lin Q.,Beijing Jiaotong University | Lin Q.,Key Laboratory of Luminescence and Optical Information | And 6 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

The semiconductor optical amplifier (SOA) is a key device for all optical signal processing based on its nonlinearity, which depends on its group velocity dispersion (GVD). A simple scheme to measure the GVD of the SOA is proposed with some computations from the measured gain spectra based on the relationship between GVD and the optical gain from the Kramers-Kronig relation. The dispersion is relatively flat in the range of 1530 nm∼1610 nm, and lightly depends on the input power and the injection current. The peak-gain wavelength and zero-dispersion wavelength red-shift with the input power increasing and blue-shift with the injection current increasing, and the zero-dispersion wavelength is greater than the peak-gain wavelength on the longer wavelength side.


Feng Z.-H.,Key Laboratory of Luminescence and Optical Information | Hou Y.-B.,Key Laboratory of Luminescence and Optical Information | Shi Q.-M.,Key Laboratory of Luminescence and Optical Information | Qin L.-F.,Key Laboratory of Luminescence and Optical Information | And 6 more authors.
Chinese Physics B | Year: 2010

In the process of fabrication of polymer photovoltaic (PV) devices, poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) thin film, acting as an anode buffer layer, is spin-coated under the action of an electric field. The PV devices with a PEDOT:PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density (J sc) and power conversion efficiency (PCE). The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT:PSS layer, which results in improved contact between the anode and hole transport layer and thus enhances the Jsc of the devices. Chemical analysis is also provided by x-ray photoelectron spectroscopy (XPS) spectra. © 2010 Chinese Physical Society and IOP Publishing Ltd.


Li Z.H.,Beijing Jiaotong University | Li Z.H.,Key Laboratory of Luminescence and Optical Information | Peng J.Y.,Beijing Jiaotong University | Peng J.Y.,Key Laboratory of Luminescence and Optical Information | And 2 more authors.
Optik | Year: 2015

In this paper we report on a long z-shaped cavity megahertz, self-mode-locked Nd:GdVO4 laser. A diode-pumped Kerr-lens mode-locking Nd:GdVO4 laser was obtained without any additional components, which operated at the third harmonic mode locking. With an incident pump power of 8 W, the average output power was up to 2 W. And the repetition rate was 450 MHz. © 2014 Elsevier GmbH. All rights reserved.


Li Q.,Beijing Jiaotong University | Li Q.,Key Laboratory of Luminescence and Optical Information | Wang Z.,Beijing Jiaotong University | Wang Z.,Key Laboratory of Luminescence and Optical Information | And 6 more authors.
Applied Optics | Year: 2014

Blind source separation (BSS) is implemented for optical fiber sensing systems, such as the fiber Bragg grating (FBG) sensing system and the single-mode-multimode-single-mode fiber (SMS) sensing system. The FastICA, a kind of multichannel BSS algorithm, is used to get the strain and the temperature with two FBGs. For the SMS sensing, a single-channel blind source separation (SCBSS) algorithmis employed to simultaneously measure the vibration and the temperature variation with only one SMS sensor. The errors of both the FBG and the SMS optical fiber sensing system are very small with the BSS algorithm. The implementation of BSS for the optical fiber sensing makes the multiparameter measurements more easily with low cost and high accuracy and can also be applied for signal de-noising field. © 2014 Optical Society of America.

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