Infrared and Low Temperature Plasma Key Laboratory of Anhui Province

Hefei, China

Infrared and Low Temperature Plasma Key Laboratory of Anhui Province

Hefei, China
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Hou D.,Electronic Engineering Institute | Hou D.,Infrared and Low Temperature Plasma Key Laboratory of Anhui Province | Hou D.,State Key Laboratory of Pulsed Power Laser Technology | Lu Y.,Electronic Engineering Institute | And 5 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2017

We prepared the vanadium oxide thin films on Si substrates by magnetron sputtering, using different substrate temperatures, 300°, 350°, 400°. The effects of substrate temperature on film composition, micro morphology, resistance temperature characteristics, TCR (temperature coefficient of resistance) and other thin film characteristics were analyzed by XRD (X-Ray Diffraction), FESEM (Field emission scanning electron microscopy), and four-probe method. Results show that the increase of substrate temperature is conducive to the promotion of V2O5(101) crystal formation in the films, meanwhile it is beneficial to reduce the gap and improve the uniformity of grain size, so as to increase the density of the films. The variation range of the film resistance was 500∼1700 KΩ·cm, 200∼550 KΩ· cm and 30∼160 KΩ· cm when the substrate temperature was 300 °, 350 ° and 400 °. With the increase of substrate temperature, the room temperature resistance and high temperature resistance of the thin film are greatly reduced, and the TCR performance has been optimized at the same time. The room temperature TCR of the film is about -2.4%/° under 400 ° substrate temperature, and the average TCR is about -1.98%/° in the process of temperature change. © 2017 SPIE.


Hou D.,Lectronic Engineering Institute | Hou D.,Infrared and Low Temperature Plasma Key Laboratory of Anhui Province | Lu Y.,Lectronic Engineering Institute | Lu Y.,Infrared and Low Temperature Plasma Key Laboratory of Anhui Province | And 2 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2017

The synthesis of the VO2 thin films, deposited by magnetron sputtering on Si substrate, was optimized in orthogonal experiment method(16 test-groups, 4-factors and 5-levels).The impact of the growth conditions, including but not limited to the sputtering power, deposition time, ratio of O2/Ar flow rates, substrate temperature and pressure, on the microstructures, phase-structures, and optical properties was investigated with X-ray diffraction.The preliminary results show that the sputtering power and substrate temperature strongly affected the stoichiometry, crystallinity, interfacial adhesion and uniformity of the VO2 coating.Possible growth mechanisms were also tentatively discussed.High quality VO2 coatings were grown under the optimized conditions: a sputtering power of 220 W, a pressure of 0.8 Pa, a substrate temperature of 300℃, and an O2/Ar flow-rate ratio of 0.5:25. © 2017, Journal of Vacuum Science and Technology Publishing House. All right reserved.


Xu K.,Infrared Research Institution | Xu K.,Infrared and Low Temperature Plasma Key Laboratory of Anhui Province | Lu Y.,Infrared Research Institution | Lu Y.,Infrared and Low Temperature Plasma Key Laboratory of Anhui Province | And 4 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2015

VO2 thin films were prepared by DC magnetron sputtering combined with oxidational annealed on Si substrate. SEM, XRD and XPS were employed to study the section, crystal composition, and valence of VO2 thin films from various aspects, and the infrared transmission properties was analyzed by FTIR. The results of analysis show that, a better crystal orientation of monoclinic rutile structure VO2 (011) crystal can be prepared through the method of DC magnetron sputtering combined with oxidational annealing, and the oxidational annealing is beneficial to the growing of VO2 grain and compactness of thin films. The VO2 thin films possesse a obvious phase transition properties, the transition temperature is 60.5℃, and the range of the change of infrared transmission rate at 3-5 μm and 8-12 μm has reached to 99.5%. The VO2 thin films have achieved the function of switch in infrared transmission, which can be an ideal material for the research in protecting infrared detector of laser attacking, and provides references for further in-depth study on oxidational annealing. © 2015, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

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