Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China

Wuhan, China

Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China

Wuhan, China

Time filter

Source Type

Long H.,Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China | Long H.,Institute of Photonics and Optoelectronics | Li S.,Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China | Li S.,Wuhan Textile University | And 5 more authors.
Optics Express | Year: 2014

ZnO/GaN-based light-emitting diodes (LEDs) with improved asymmetric double heterostructure of Ta2O5/ZnO/HfO2 have been fabricated. Electroluminescence (EL) performance has been enhanced by the HfO2 electron blocking layer and further improved by continuing inserting the Ta2O5 hole blocking layer. The origins of the emission have been identified, which indicated that the Ta2O5/ZnO/HfO2 asymmetric structure could more effectively confine carriers in the active i-ZnO layer and meanwhile suppresses of radiation from GaN. This device exhibits superior stability in long-time running. It's hoped that the asymmetric double heterostructure may be helpful for the development of the future ZnO-based LEDs. © 2014 Optical Society of America.


S. Li,Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China | S. Li,Wuhan Textile University | Fang G.,Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China | Huang H.,Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China | And 5 more authors.
Applied Physics B: Lasers and Optics | Year: 2012

n-ZnO:Al/n --ZnO/i-MgO/n-GaN heterostructured diodes have been fabricated by radio frequency magnetron sputtering. The electroluminescence (EL) of the n-ZnO:Al/n --ZnO/i-MgO/n-GaN diodes has been investigated. All EL spectra are dominated by ultraviolet (UV) emission peaked at around 368 nm. However, EL performances of the devices can be tuned through controlling the electrical parameters of ZnO:Al films. With the variation of the ZnO:Al films, EL spectra could evolve into random lasing action from conventional EL. The electrical parameters of the corresponding ZnO:Al films were researched, and the related UV emission mechanism is discussed in terms of the energy-band theory of the heterojunctions. © Springer-Verlag 2012.

Loading Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China collaborators
Loading Key Laboratory of Artificial Micro and Nano structures of Ministry of Education of China collaborators